1. bookVolume 29 (2011): Issue 1 (March 2011)
Journal Details
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Journal
First Published
16 Apr 2011
Publication timeframe
4 times per year
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English
access type Open Access

Microwave dielectric properties of BiFeO3 multiferoic films deposited on conductive layers

Published Online: 03 Aug 2011
Page range: 41 - 46
Journal Details
License
Format
Journal
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

Nondoped BiFeO3 (BFO) and doped Bi0.9La0.1Fe0.9Mn0.1O3 (BLFMO) thin films (d = 200–350 nm) were grown at 650–750 °C by RF sputtering on Si and SrTiO3(100), coated by conductive LaNiO3 films and La2/3Ca1/3MnO3/SrRuO3 bilayers. The complex dielectric permittivity of the films was measured at room temperature in the frequency range from 10 MHz to 10 GHz using parallel plate capacitor structures. Dielectric properties of the polycrystalline BFO films were compared with those of the epitaxial quality BLFMO films, and it was seen that the latter has better microwave performance than the former. The dielectric losses were below 0.05 at 1 GHz frequency, which may be acceptable for microwave applications.

Keywords

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