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Materials Science-Poland
Volume 37 (2019): Issue 3 (September 2019)
Open Access
Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film
Asim Mantarci
Asim Mantarci
Department of Physics, Faculty of Art and Science, Muş Alparslan University
Muş, Turkey
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Mantarci, Asim
and
Mutlu Kundakçi
Mutlu Kundakçi
Department of Physics, Faculty of Science, Atatürk University
Erzurum, Turkey
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Kundakçi, Mutlu
Oct 18, 2019
Materials Science-Poland
Volume 37 (2019): Issue 3 (September 2019)
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Published Online:
Oct 18, 2019
Page range:
454 - 464
Received:
Jul 23, 2018
Accepted:
Mar 01, 2019
DOI:
https://doi.org/10.2478/msp-2019-0052
Keywords
RF magnetron sputtering
,
thin film
,
III-nitride
,
GaN
,
semiconductor
© 2019 Asim Mantarci et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
