1. bookVolume 37 (2019): Issue 2 (June 2019)
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Influence of Bi on dielectric properties of GaAs1−xBix alloys

Published Online: 02 Aug 2019
Volume & Issue: Volume 37 (2019) - Issue 2 (June 2019)
Page range: 244 - 248
Received: 21 Jul 2018
Accepted: 13 Sep 2018
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

Pure GaAs and GaAs1−xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs1−xBix samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs1−xBix, presented in the literature.

Keywords

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