Fin-typed field effect transistor (FinFET) has considered a suitable device for low power and high-performance applications. The incorporation of gate dielectric lanthanum doped zirconium oxide (LaZrO2) in the 14 nm silicon on insulator (SOI) FinFET not only enhanced effective carrier mobility but also diminished the short channel effects (SCEs). The FinFET embodiment with LaZrO2 has dwindled subthreshold swing (SS), reduced drain-induced barrier lowering (DIBL), and raised on-current to off-current ratio as a contrast to SiO2-based FinFET. A remarkable enhancement of 1.18×, 11×, and 1.3× for transconductance (