Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst
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Mar 20, 2018
About this article
Published Online: Mar 20, 2018
Page range: 687 - 693
Received: Jan 24, 2016
Accepted: Nov 18, 2017
DOI: https://doi.org/10.1515/msp-2017-0099
Keywords
© 2018
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
The objective of the present research work is to optimize the growth conditions of bi- tri- and few-layer graphene using pulsed laser deposition (PLD) technique. The graphene was grown on n-type silicon (1 0 0) at 530 °C. Raman spectroscopy of the grown films revealed that the growth of low defect tri-layer graphene depended upon Ni content and uniformity of the Ni film. The line profile analysis of the AFM micrographs of the films also confirmed the formation of bi- tri- and a few-layer graphene. The deposited uniform Ni film matrix and carbon/Ni thickness ratio are the controlling factors for the growth of bitri- or few- layer graphene using pulsed laser deposition technique.