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Journals
Materials Science-Poland
Volume 35 (2017): Issue 3 (October 2017)
Open Access
Heavily Si-doped InAs photoluminescence measurements
Kacper Grodecki
Kacper Grodecki
,
Krzysztof Murawski
Krzysztof Murawski
,
Aleksandra Henig
Aleksandra Henig
,
Krystian Michalczewski
Krystian Michalczewski
,
Djalal Benyahia
Djalal Benyahia
,
Łukasz Kubiszyn
Łukasz Kubiszyn
and
Piotr Martyniuk
Piotr Martyniuk
| Oct 31, 2017
Materials Science-Poland
Volume 35 (2017): Issue 3 (October 2017)
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Published Online:
Oct 31, 2017
Page range:
647 - 650
Received:
Apr 03, 2017
Accepted:
Aug 30, 2017
DOI:
https://doi.org/10.1515/msp-2017-0075
Keywords
In As
,
photoluminescence
,
Burstein-Moss
,
heavy doping
© 2017
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Kacper Grodecki
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908
Warsaw, Poland
Krzysztof Murawski
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908
Warsaw, Poland
Aleksandra Henig
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908
Warsaw, Poland
Krystian Michalczewski
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908
Warsaw, Poland
Djalal Benyahia
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908
Warsaw, Poland
Łukasz Kubiszyn
Kaliskiego St., 00-908 Warsaw, Poland 2Vigo System S.A., 129/133 Poznañska St., 05-850
Ożarów Mazowiecki, Poland
Piotr Martyniuk
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908
Warsaw, Poland