1. bookVolume 35 (2017): Issue 3 (October 2017)
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Open Access

Multifractal characterization of epitaxial silicon carbide on silicon

Published Online: 31 Oct 2017
Volume & Issue: Volume 35 (2017) - Issue 3 (October 2017)
Page range: 539 - 547
Received: 13 Oct 2016
Accepted: 28 Mar 2017
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Keywords

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