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The impact of phase state of guest histidine on properties and practical applications of nanohybrids on InSe and GaSe basis

F.O. Ivashchyshyn

F.O. Ivashchyshyn

Lviv Polytechnic National UniversityLviv, Ukraine
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Ivashchyshyn, F.O.
, 
I.I. Grygorchak

I.I. Grygorchak

Lviv Polytechnic National UniversityLviv, Ukraine
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Grygorchak, I.I.
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O.V. Balaban

O.V. Balaban

Lviv Polytechnic National UniversityLviv, Ukraine
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Balaban, O.V.
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B.O. Seredyuk

B.O. Seredyuk

National Academy of Land ForcesLviv, Ukraine
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Seredyuk, B.O.
  
Apr 29, 2017
The impact of phase state of guest histidine on properties and practical applications of nanohybrids on InSe and GaSe basis's Cover Image
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Published Online: Apr 29, 2017
Page range: 239 - 245
Received: Jun 22, 2016
Accepted: Dec 23, 2016
DOI: https://doi.org/10.1515/msp-2017-0019
Keywords
© 2017 F.O. Ivashchyshyn, I.I. Grygorchak, O.V. Balaban, B.O. Seredyuk
This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Nyquist diagrams of the original expanded GaSe matrix (1), and nanostructure of GaSe ‹his›(2) with the respective equivalent circuit diagrams [10]. Equivalent circuit diagrams are shown in the insets (a) and (b) on the righthand side of the figure.
Nyquist diagrams of the original expanded GaSe matrix (1), and nanostructure of GaSe ‹his›(2) with the respective equivalent circuit diagrams [10]. Equivalent circuit diagrams are shown in the insets (a) and (b) on the righthand side of the figure.
Pulse generation in bio/nonorganic N-barrier GaSe ‹his› nanostructure
Pulse generation in bio/nonorganic N-barrier GaSe ‹his› nanostructure
Nyquist diagrams (a) and CVC (b), measured perpendicular to the nanolayers of GaSe ‹his + H2O› (1) and GaSe ‹his + H2O + KOH› (2). Galvanostatic charge-discharge cycles of GaSe ‹his + H2O + KOH› at the current of 1 µA (3) and 10 µA (4) are shown in the inset.
Nyquist diagrams (a) and CVC (b), measured perpendicular to the nanolayers of GaSe ‹his + H2O› (1) and GaSe ‹his + H2O + KOH› (2). Galvanostatic charge-discharge cycles of GaSe ‹his + H2O + KOH› at the current of 1 µA (3) and 10 µA (4) are shown in the inset.
Nyquist diagrams (a) and CVC (b), measured along the nanolayers of GaSe ‹his + H2O› (1) and GaSe ‹his + H2O + KOH› (2).
Nyquist diagrams (a) and CVC (b), measured along the nanolayers of GaSe ‹his + H2O› (1) and GaSe ‹his + H2O + KOH› (2).
Nyquist diagrams of the original expanded GaSe matrix (1) and GaSe ‹his› nanostructure (2).
Nyquist diagrams of the original expanded GaSe matrix (1) and GaSe ‹his› nanostructure (2).
Nyquist diagrams (a) and CVC (b), measured perpendicular to the nanolayers of InSe ‹his + H2O› (1) and InSe ‹his + H2O + KOH› (2). Galvanostatic charge-discharge cycle at 1 µA current (top left corner), tangent of loss angle and dielectric constant (bottom right corner) of InSe ‹his + H2O + KOH› are shown in the insets to Fig. 6b.
Nyquist diagrams (a) and CVC (b), measured perpendicular to the nanolayers of InSe ‹his + H2O› (1) and InSe ‹his + H2O + KOH› (2). Galvanostatic charge-discharge cycle at 1 µA current (top left corner), tangent of loss angle and dielectric constant (bottom right corner) of InSe ‹his + H2O + KOH› are shown in the insets to Fig. 6b.
Nyquist diagrams (a) and CVC (b), measured along the nanolayers for InSe ‹his + H2O› (1) and InSe ‹his + H2O + KOH› (2).
Nyquist diagrams (a) and CVC (b), measured along the nanolayers for InSe ‹his + H2O› (1) and InSe ‹his + H2O + KOH› (2).

Parameters of the model (b)_

ElementR1CPE1R2CPE2R3CPE3LR4CPE4
of the model[Ω][F][Ω][F][Ω][F][H][Ω][F]
Value6.57E72.93E-142.96E84.79E-128.77E81.73E-84.63E33.04E91.17E-10

Parameters of the model (a)_

ElementBCPE1BCPE2RCPE
of the model[Ω][Ω][Ω][F]
Value2.15E81.01E81.73E84.47E-12
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
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