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Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
Open Access
Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method
Wojciech Kijaszek
Wojciech Kijaszek
,
Waldemar Oleszkiewicz
Waldemar Oleszkiewicz
,
Adrian Zakrzewski
Adrian Zakrzewski
,
Sergiusz Patela
Sergiusz Patela
and
Marek Tłaczała
Marek Tłaczała
| Nov 27, 2016
Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
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Published Online:
Nov 27, 2016
Page range:
868 - 871
Received:
Apr 20, 2016
Accepted:
Sep 26, 2016
DOI:
https://doi.org/10.1515/msp-2016-0111
Keywords
silicon oxynitride
,
RF PECVD
,
spectroscopic ellipsometry
,
reflection coefficient
© Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
Growth rate of the SiOxNy film deposited by the PECVD technique as a function of ammonia flow rate.
Refractive index as a function of wavelength for SiOxNy films deposited at different NH3 flow rates.
Comparison of reflection coefficients of the Si substrate, SiO2 buffer and SiO2/SiON bilayer.