1. bookVolume 33 (2015): Issue 3 (September 2015)
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Application of Aloe vera gel instead of silicon dioxide as organic dielectric material in microelectronics

Published Online: 30 Aug 2016
Volume & Issue: Volume 33 (2015) - Issue 3 (September 2015)
Page range: 635 - 638
Received: 22 Jan 2015
Accepted: 20 Apr 2015
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

Organic materials are now being used in a wide range of microelectronic applications in parallel with inorganic materials, because of their superior properties, environmental safety, and low cost. This paper describes the characterization of Aloe vera gel (AVG), a new organic dielectric material. The surface morphology, spatial distribution of elements, and structural characteristics of an AVG layer were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDX), and X-ray diffraction (XRD), respectively. The resistance of the AVG layer, determined using a four-probe station, was 640 Ω EDX showed that the elements contained in the layer were carbon, oxygen, aluminum, silicon, calcium, potassium, and copper. The XRD results suggested that the sample primarily consisted of bornite (Cu5FeS4), geerite (Cu8S5), sal ammoniac (NH4Cl), and carobbite (KF).

Keywords

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