<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>(Bi2Te3)x(Sb2Te3)1−x
                         solid solutions with x = 0:2, 0.25 and 0.3 − p type thermoelectric compounds with an excess of Tellurium dopant up to 4 wt% were crystallized. By increasing the Bi2Te3 content in the Bi-Sb-Te system, the hole concentration decreased and in consequence caused an optimum Seebeck coefficient and a decrease in electrical conductivity and thermal conductivity, thus resulting in an increase in the figure of merit at x = 0:25. The results showed that optimum thermoelectric properties can be achieved for a mixture of x = 0:25 with 3 wt% Te added. Structural characterizations of this compound in the absence and presence of the dopant were carried out by means of X-Ray diffraction measurement, scanning electron microscopy, electron backscattering diffraction and atomic force microscopy. Detailed analyses confirm that the improvements in thermoelectric parameters due to the intrinsic structure and minimum defects during crystallization of the compounds result from the excess of Te.</p></abstract>

(Bi2Te3)x(Sb2Te3)1−x
                         solid solutions with x = 0:2, 0.25 and 0.3 − p type thermoelectric compounds with an excess of Tellurium dopant up to 4 wt% were crystallized. By increasing the Bi2Te3 content in the Bi-Sb-Te system, the hole concentration decreased and in consequence caused an optimum Seebeck coefficient and a decrease in electrical conductivity and thermal conductivity, thus resulting in an increase in the figure of merit at x = 0:25. The results showed that optimum thermoelectric properties can be achieved for a mixture of x = 0:25 with 3 wt% Te added. Structural characterizations of this compound in the absence and presence of the dopant were carried out by means of X-Ray diffraction measurement, scanning electron microscopy, electron backscattering diffraction and atomic force microscopy. Detailed analyses confirm that the improvements in thermoelectric parameters due to the intrinsic structure and minimum defects during crystallization of the compounds result from the excess of Te.

(Bi2Te3)0:25(Sb2Te3)0:75 crystal structure improvements with excess Te as studied by AFM, SEM, EBSD and XRD

Material and Energy Research Centre, P.O. Box 14155-4777, Tehran, Iran

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

(Bi2Te3)x(Sb2Te3)1−x
                         solid solutions with x = 0:2, 0.25 and 0.3 − p type thermoelectric compounds with an excess of Tellurium dopant...

(Bi2Te3)0:25(Sb2Te3)0:75 crystal structure improvements with excess Te as studied by AFM, SEM, EBSD and XRD

Pubblicato online: 27 dic 2011

Pagine: 143 - 151

DOI: https://doi.org/10.2478/s13536-011-0021-9

Parole chiave
structure homogeneity, intrinsic structure, Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Electron Backscatter Diffraction (EBSD)

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

(Bi2Te3)0:25(Sb2Te3)0:75 crystal structure improvements with excess Te as studied by AFM, SEM, EBSD and XRD

Pubblicato online: 27 dic 2011

Pagine: 143 - 151

DOI: https://doi.org/10.2478/s13536-011-0021-9

Parole chiavestructure homogeneity, intrinsic structure, Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Electron Backscatter Diffraction (EBSD)

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Parole chiave
structure homogeneity, intrinsic structure, Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Electron Backscatter Diffraction (EBSD)