Hafnium dioxide effect on the electrical properties of M/n-GaN structure
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08 mag 2020
INFORMAZIONI SU QUESTO ARTICOLO
Pubblicato online: 08 mag 2020
Pagine: 165 - 173
Ricevuto: 21 dic 2018
Accettato: 23 apr 2019
DOI: https://doi.org/10.2478/msp-2020-0020
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© 2020 Sadoun Ali et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Ali, Sadoun
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Sedik, Mansouri
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Mohammed, Chellali
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Nacereddine, Lakhdar
University of El Oued, Fac. TechnologyEl Oued, Algeria
Abdelkader, Hima
University of El Oued, Fac. TechnologyEl Oued, Algeria
Zineb, Benamara
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria