<abstract xmlns="http://www.w3.org/1999/xhtml"><p>The near-band luminescence of doped ZnO is promising for advanced scintillators; however, the dopant type and concentration effects require a detailed study. Undoped and Ga-doped ZnO nanopowders were prepared by a microwave-assisted solvothermal method and the gallium concentration effect on luminescence properties was studied. The near-band luminescence peak position dependence on gallium concentration was observed. Near-band luminescence intensity versus defect luminescence intensity ratio was explored for different gallium concentrations and the optimal value was determined. Samples were prepared with dopant concentrations between 0.2 and 1.5 at%, XRD analysis confirmed that samples contained only zinc oxide hexagonal wurtzite phase. The results of the research showed that ZnO:Ga containing 0.9 at.% gallium was promising for scintillators.</p></abstract>

The near-band luminescence of doped ZnO is promising for advanced scintillators; however, the dopant type and concentration effects require a detailed study. Undoped and Ga-doped ZnO nanopowders were prepared by a microwave-assisted solvothermal method and the gallium concentration effect on luminescence properties was studied. The near-band luminescence peak position dependence on gallium concentration was observed. Near-band luminescence intensity versus defect luminescence intensity ratio was explored for different gallium concentrations and the optimal value was determined. Samples were prepared with dopant concentrations between 0.2 and 1.5 at%, XRD analysis confirmed that samples contained only zinc oxide hexagonal wurtzite phase. The results of the research showed that ZnO:Ga containing 0.9 at.% gallium was promising for scintillators.

Gallium Concentration Optimisation of Gallium Doped Zinc Oxide for Improvement of Optical Properties

Latvian Journal of Physics and Technical Sciences

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

The near-band luminescence of doped ZnO is promising for advanced scintillators; however, the dopant type and concentration effects require a detailed study....

Gallium Concentration Optimisation of Gallium Doped Zinc Oxide for Improvement of Optical Properties

Pubblicato online: 29 gen 2021

Pagine: 33 - 43

DOI: https://doi.org/10.2478/lpts-2021-0004

Parole chiave
Luminescence, microwave-assisted solvothermal synthesis, optimised concentration, scintillator, ZnO:Ga

© 2021 A. Spustaka et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Gallium Concentration Optimisation of Gallium Doped Zinc Oxide for Improvement of Optical Properties

Pubblicato online: 29 gen 2021

Pagine: 33 - 43

DOI: https://doi.org/10.2478/lpts-2021-0004

Parole chiaveLuminescence, microwave-assisted solvothermal synthesis, optimised concentration, scintillator, ZnO:Ga

© 2021 A. Spustaka et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Parole chiave
Luminescence, microwave-assisted solvothermal synthesis, optimised concentration, scintillator, ZnO:Ga