Development and characterisation of photoelectrochemical MIS structures with RuO₂/TiO₂ gate stacs for water oxidation

This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO₂ layer and TiO₂ protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO₂ layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO₂. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO₂ layer thickness is discussed in the paper. Results revealed that utilization of TiO₂ layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.