INFORMAZIONI SU QUESTO ARTICOLO

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[1] MURAKAMI, M.–KOIDE, Y. Ohmic Contacts for Compound Semiconductors Critical Reviews: Solid State and Materials Sciences 23 (1998), 1-60.Search in Google Scholar

[2] WENZEL, R.–FISCHER, G. G.–SCHMID-FETZER, R.: Ohmic Contacts on p-GaN (Part I): Investigation of Different Contact Metals and their Thermal Treatment, Materials Science in Semiconductor Processing 4 (2001), 357-365.10.1016/S1369-8001(00)00177-3Search in Google Scholar

[3] HO,J. K.–JONG, C. S.–CHIU,C.C.–HUANG,C.N.–SHIH, K. K.–CHEN, L. C.–CHEN, F. R.–KAI, J. J.: Low Resistance Ohmic Contacts to p-type GaN Achieved by the Oxidation of Ni/Au Films, Journal of Applied Physics 86 (1999), 4491-4497.10.1063/1.371392Search in Google Scholar

[4] MISTELE, D.–FEDLER, F.–KLAUSING, H.–ROTTER, T.–STEMMER, J.–SEMCHINOVA, O. K.–ADERHOLD, J.: Investigation of Ni/Au-contacts on p-GaN Annealed in Different Atmospheres, Journal of Crystal Growth 230 (2001), 564-568.10.1016/S0022-0248(01)01250-7Search in Google Scholar

[5] JANG, H. W.–KIM, S. Y.–LEE, J.-L.: Mechanism for Ohmic Contact Formation of Oxidized Ni/Au on p-type GaN, Journal of Applied Physics 94 (2003), 1748-1752.10.1063/1.1586983Search in Google Scholar

[6] LIDAY, J.–HOTOVÝ, I.–SITTER, H.–VOGRINČIČ, P.– VINCZE, A.–VÁVRA, I.–ŠATKA, A.–ECKE, G.–BONA-NNI, A.–BREZA,J.–SIMBRUNNER,C.–PLOCHBERGER, B.: Investigation of NiOx-based Contacts on p-GaN, Journal of Materials Science: Materials in Electronics 19 (2008), 855-862.Search in Google Scholar

[7] SONG, J.-O.–LEEM, D.-S.–SEONG, T.-Y.: Formation of Low Resistance and Transparent Ohmic Contacts to p-type GaN Using NiMg Solid Solution, Applied Physics Letters 83 (2003), 3513-3515.10.1063/1.1622984Search in Google Scholar

[8] SONG, J.-O.–LEEM, D.-S.–SEONG, T.-Y.: Low-resistance and Transparent Ohmic Contacts to p-Type GaN Using ZnNi Solid Solution/Au Scheme, Applied Physics Letters 84 (2004), 4663-4665.10.1063/1.1759774Search in Google Scholar

[9] LIDAY, J.–VOGRINČIČ, P.–VINCZE, A.–BREZA, J.–HO-TOVÝ, I.: Improving the Ohmic Properties of Contacts to p-GaN by Adding p-type Dopants into the Metallization Layer, Journal of Electrical Engineering 63 (2012), 397-401.10.2478/v10187-012-0059-xSearch in Google Scholar

[10] ZAHAB, A.–SPINA, L.–PONCHARAL, P.–MARLIRE, C.: Water-vapor Effect on the Electrical Conductivity of a Single-walled Carbon Nanotube, Mat Physical Review No. B62 (2000), 10 000-10 003.10.1103/PhysRevB.62.10000Search in Google Scholar

[11] LEE, K.–WU, Z.–CHEN, Z.–PEARTON, S. J.–RINZLER, A. G.: Single Wall Carbon Nanotubes for p-type Ohmic Contacts to GaN Light-emitting Diodes, Nano Letters No. 4 (2004), 911-914.10.1021/nl0496522Search in Google Scholar

[12] DERYCKE, V.–MARTEL, R.–APPENZELLER, J.–AVO-URIS, PH.: Controlling Doping and Carrier Injection in Carbon Nanotube Transistors, Applied Physics Letters 80 (2002), 2773-2775.10.1063/1.1467702Search in Google Scholar

[13] ANTONOV, R. D.–JOHNSON, A. T.: Subband Population in a Single-wall Carbon Nanotube Diode, Physical Review Letters 83 (1999), 3274-3276.10.1103/PhysRevLett.83.3274Search in Google Scholar

[14] LIDAY, J.–VOGRINČIČ, P.–VRETENÁR, V.–KOTLÁ'R, M.–VÁVRA, I.–HOTOVÝ, I.–BREZA, J.–ŘEHÁČEK, V.: The Layers of Carbon Nanomaterials as the Base of Ohmic Contacts to p-GaN, Applied Surface Science 312 (2014), 63-67.10.1016/j.apsusc.2014.05.156Search in Google Scholar

[15] PHAM, T. A.–KIM, JEONGSIK–KIM, JEONGSU–JEONG, Y. T.: One-step Reduction of Graphene Oxide with L-glutathio-nev Colloids and Surfaces, A: Physicochemical and Engineering Aspects 384 (2011), 543-548.Search in Google Scholar

[16] SKÁKALOVÁ, V.–VRETENÁR, V.–KOPERA,.–L'KOTRU-SZ, P.–MANGLER, C.–MEŠKO, M.–MEYER, J. C.–HUL- MAN, M.: Electronic Transport in Composites of Graphite Oxide with Carbon Nanotubes, Carbon 72 (2014), 224-232.10.1016/j.carbon.2014.02.006Search in Google Scholar

[17] KINDER, R.–MIKOLÁŠEK, M.–DONOVAL, D.–KOVÁČ, J.–TLACZALA, M.: Measurement System with Hall and Four Point Probes for Characterization of Semiconductors, Journal of Electrical Engineering 67 (2013), 106-111.10.2478/jeec-2012-0015Search in Google Scholar

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