Electrical and Capacitance Diagnostic Techniques as a Support for the Development of Silicon Heterojunction Solar Cells
Pubblicato online: 23 apr 2014
Pagine: 111 - 115
DOI: https://doi.org/10.2478/jee-2014-0016
Parole chiave
© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In this paper we present the utilization of capacitance and current-voltage diagnostic techniques to analyse silicon heterojunction solar cell structures properties, particularly focused on the inspection of the amorphous emitter and amorphous silicon/crystalline silicon hetero-interface. The capacitance characterization of investigated samples have revealed the need for improvement of the a-Si:H/c-Si heterointerface quality as a main direction to obtain superior output performance of heterojunction cells. In addition, current-voltage characterization emphasized importance for enhancement of the light management in the structure. The obtained results demonstrate that electrical and capacitance diagnostic techniques can represents important diagnostic tools in the process of optimization of solar cells.