The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N Plasma

In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N₂ plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000) is provided.

ISSN:: 1335-3632
Lingua:: Inglese

Frequenza di pubblicazione:: 6 volte all'anno
Argomenti della rivista:: Engineering, Introductions and Overviews, other

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The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N2 Plasma

Pubblicato online: 23 nov 2013

Pagine: 371 - 375

DOI: https://doi.org/10.2478/jee-2013-0056

Parole chiaveAZ 5214E resist, PMMA resist, image reversal, EBDW lithography, characteristic curves, RIE, etch-rates

This content is open access.

The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N₂ Plasma

Parole chiave
AZ 5214E resist, PMMA resist, image reversal, EBDW lithography, characteristic curves, RIE, etch-rates