<abstract xmlns="http://www.w3.org/1999/xhtml"><p>We report the results of studies for the radiation-stimulated changes in electro-physical characteristics of surface-barrier Al–Si–Bi structures based on p-Si. We demonstrate that the X-ray irradiation is accompanied by different processes which depend on the density of the dislocations in the original silicon crystals. A usual evolution of the existing structural defects and their radiation-stimulated ordering dominate when the concentration remains low enough. Increase in the concentration causes the increasing role of generation of additional radiation defects. Modelling of the underlying physical processes has testified that the near-contact Si layers are strained. They act as getters for the structural defects and impurities.</p></abstract>

We report the results of studies for the radiation-stimulated changes in electro-physical characteristics of surface-barrier Al–Si–Bi structures based on p-Si. We demonstrate that the X-ray irradiation is accompanied by different processes which depend on the density of the dislocations in the original silicon crystals. A usual evolution of the existing structural defects and their radiation-stimulated ordering dominate when the concentration remains low enough. Increase in the concentration causes the increasing role of generation of additional radiation defects. Modelling of the underlying physical processes has testified that the near-contact Si layers are strained. They act as getters for the structural defects and impurities.

Radiation-Stimulated Changes in the Characteristics of Surface-Barrier Al–Si–Bi Structures with Different Concentrations of Dislocations at the Crystal Surface

Acta Mechanica et Automatica

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

We report the results of studies for the radiation-stimulated changes in electro-physical characteristics of surface-barrier Al–Si–Bi structures based on p-Si....

Radiation-Stimulated Changes in the Characteristics of Surface-Barrier Al–Si–Bi Structures with Different Concentrations of Dislocations at the Crystal Surface

Pubblicato online: 04 apr 2018

Pagine: 72 - 77

Ricevuto: 06 giu 2016

Accettato: 22 mar 2018

DOI: https://doi.org/10.2478/ama-2018-0012

Parole chiave
Silicon, Dislocations, Surface-Barrier Structures, Surface Layers, Radiation-Stimulated Reconstruction of Defects

© 2018 Bohdan Pavlyk et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Radiation-Stimulated Changes in the Characteristics of Surface-Barrier Al–Si–Bi Structures with Different Concentrations of Dislocations at the Crystal Surface

Pubblicato online: 04 apr 2018

Pagine: 72 - 77

Ricevuto: 06 giu 2016

Accettato: 22 mar 2018

DOI: https://doi.org/10.2478/ama-2018-0012

Parole chiaveSilicon, Dislocations, Surface-Barrier Structures, Surface Layers, Radiation-Stimulated Reconstruction of Defects

© 2018 Bohdan Pavlyk et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Parole chiave
Silicon, Dislocations, Surface-Barrier Structures, Surface Layers, Radiation-Stimulated Reconstruction of Defects