<abstract xmlns="http://www.w3.org/1999/xhtml">

<p>this research aims to study and discuss the theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors based on Shockley–Read-Hall assumptions. The variation of carrier life time, recombination and generation rates as a function of the intrinsic layer (I-layer) thickness will be simulated using MATLAB program. The effects of intrinsic layer thickness on electrons and holes concentration, collection efficiency and short circuit current density have been studied and analyzed. It has been found that as the thickness increased, the parameters: recombination rate, generation rate, internal electric field, electrons and holes concentration, carriers’ life times, and short circuit current density, were subjected to some variations.</p></abstract>

this research aims to study and discuss the theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors based on Shockley–Read-Hall assumptions. The variation of carrier life time, recombination and generation rates as a function of the intrinsic layer (I-layer) thickness will be simulated using MATLAB program. The effects of intrinsic layer thickness on electrons and holes concentration, collection efficiency and short circuit current density have been studied and analyzed. It has been found that as the thickness increased, the parameters: recombination rate, generation rate, internal electric field, electrons and holes concentration, carriers’ life times, and short circuit current density, were subjected to some variations.

Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

International Journal on Smart Sensing and Intelligent Systems

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

this research aims to study and discuss the theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors based on...

Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

Pubblicato online: 15 feb 2020

Pagine: 1 - 5

DOI: https://doi.org/10.21307/ijssis-2019-102

Parole chiave
Silicon photosensors, PIN photodiode, amorphous Si, optoelectronic properties

© 2019 Authors., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

Pubblicato online: 15 feb 2020

Pagine: 1 - 5

DOI: https://doi.org/10.21307/ijssis-2019-102

Parole chiaveSilicon photosensors, PIN photodiode, amorphous Si, optoelectronic properties

© 2019 Authors., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Parole chiave
Silicon photosensors, PIN photodiode, amorphous Si, optoelectronic properties