INFORMAZIONI SU QUESTO ARTICOLO

Cita

Evgeny Sysoev
Technological Design Institute of Scientific Instrument Engineering, Siberian Branch of the Russian Academy of Sciences (TDI SIE SB RAS) Novosibirsk, Russian Federation
Sergey Kosolobov
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS) Novosibirsk, Russian Federation
Rodion Kulikov
Technological Design Institute of Scientific Instrument Engineering, Siberian Branch of the Russian Academy of Sciences (TDI SIE SB RAS) Novosibirsk, Russian Federation
Alexander Latyshev
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS) Novosibirsk, Russian Federation
Sergey Sitnikov
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS) Novosibirsk, Russian Federation
Ignat Vykhristyuk
Technological Design Institute of Scientific Instrument Engineering, Siberian Branch of the Russian Academy of Sciences (TDI SIE SB RAS) Novosibirsk, Russian Federation
eISSN:
1335-8871
Lingua:
Inglese
Frequenza di pubblicazione:
6 volte all'anno
Argomenti della rivista:
Engineering, Electrical Engineering, Control Engineering, Metrology and Testing