<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.</p></abstract>

Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw,

Institute of Physics, Polish Academy of Science, al. Lotnikow 32/46, 02-668 Warsaw,

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level...

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Pubblicato online: 19 dic 2016

Pagine: 726 - 734

Ricevuto: 18 dic 2015

Accettato: 02 nov 2016

DOI: https://doi.org/10.1515/msp-2016-0126

Parole chiave
GaNAs, dilute nitrides, deep-level defects, DLTS, LDLTS, APMOVPE

© Wroclaw University of Science and Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Pubblicato online: 19 dic 2016

Pagine: 726 - 734

Ricevuto: 18 dic 2015

Accettato: 02 nov 2016

DOI: https://doi.org/10.1515/msp-2016-0126

Parole chiaveGaNAs, dilute nitrides, deep-level defects, DLTS, LDLTS, APMOVPE

© Wroclaw University of Science and Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Parole chiave
GaNAs, dilute nitrides, deep-level defects, DLTS, LDLTS, APMOVPE