<abstract xmlns="http://www.w3.org/1999/xhtml">Nanoneedle structured Sn2S3 thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar concentrations of S:Sn = 0.01:0.01, 0.02:0.02, 0.03:0.03 and 0.04:0.04 in the starting solutions. XRD studies reveal that all the films exhibit orthorhombic crystal structure with a preferential orientation along the [2 1 1] direction. The peak intensity of the (2 1 1) plane is found to be maximum for the film coated with 0.02:0.02 S:Sn molar concentration which confirms the improved crystalline nature of this film. SEM images depict that the film coated with S:Sn molar concentration 0.02:0.02 exhibit needle shaped grains. The optical band gap exhibits red shift from 2.12 eV to 2.02 eV with an increase in S:Sn precursor molar concentration. Electrical studies show that the films having S:Sn molar concentrations 0.01:0.01 and 0.02:0.02 exhibit minimum resistivity values of 0.238 and 0.359Ω ·cm, respectively.© Wroclaw University of Technology.</abstract>

Nanoneedle structured Sn2S3 thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar concentrations of S:Sn = 0.01:0.01, 0.02:0.02, 0.03:0.03 and 0.04:0.04 in the starting solutions. XRD studies reveal that all the films exhibit orthorhombic crystal structure with a preferential orientation along the [2 1 1] direction. The peak intensity of the (2 1 1) plane is found to be maximum for the film coated with 0.02:0.02 S:Sn molar concentration which confirms the improved crystalline nature of this film. SEM images depict that the film coated with S:Sn molar concentration 0.02:0.02 exhibit needle shaped grains. The optical band gap exhibits red shift from 2.12 eV to 2.02 eV with an increase in S:Sn precursor molar concentration. Electrical studies show that the films having S:Sn molar concentrations 0.01:0.01 and 0.02:0.02 exhibit minimum resistivity values of 0.238 and 0.359Ω ·cm, respectively.© Wroclaw University of Technology.

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3 thin films

PG and Research Department of Physics, AVVM Sri Pushpam College, Poondi-613 503, Tamilnadu, India

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase SnS thin films

Nanoneedle structured Sn2S3 thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar...

S:Sn precursor	Thickness	d₍₂₁₁₎	D	ε × 10⁻⁴	δ × 10⁻¹⁴	Lattice parameters [Å]			ρ
molar concentration	t [nm]	[Å]	[nm]		[lines/m²]	a	b	c	[Ω·cm]
0.01:0.01	90	2.8099	45.9	0.755	4.7489	15.554	5.620	5.659	0.238
0.02:0.02	122	2.8115	56	0.619	3.1931	15.563	5.623	5.662	0.359
0.03:0.03	176	2.8136	42	0.826	5.6773	15.575	5.627	5.666	1.095
0.04:0.04	206	2.8231	35.6	1.032	8.8709	15.627	5.646	5.685	6.38

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃ thin films

Article Category: Research Article

Pubblicato online: 10 giu 2016

Pagine: 393 - 398

Ricevuto: 30 ott 2015

Accettato: 15 gen 2016

DOI: https://doi.org/10.1515/msp-2016-0035

© Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Fig. 1

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Fig. 5

Thickness, structural parameters and electrical resistivity values of Sn2S3 thin films prepared from solutions having different S:Sn precursor molar concentrations.