<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Evaluation of photoluminescence spectra of porous silicon (PS) samples prepared by electrochemical etching is presented. The samples were measured at temperatures 30, 70 and 150 K. Peak parameters (energy, intensity and width) were calculated. The PL spectrum was approximated by a set of Gaussian peaks. Their parameters were fixed using fitting a procedure in which the optimal number of peeks included into the model was estimated using the residuum of the approximation. The weak thermal dependence of the spectra indicates the strong influence of active defects.</p></abstract>

Evaluation of photoluminescence spectra of porous silicon (PS) samples prepared by electrochemical etching is presented. The samples were measured at temperatures 30, 70 and 150 K. Peak parameters (energy, intensity and width) were calculated. The PL spectrum was approximated by a set of Gaussian peaks. Their parameters were fixed using fitting a procedure in which the optimal number of peeks included into the model was estimated using the residuum of the approximation. The weak thermal dependence of the spectra indicates the strong influence of active defects.

Temperature dependence of photoluminescence peaks of porous silicon structures

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Temperature dependence of photoluminescence peaks of porous silicon structures"}

Evaluation of photoluminescence spectra of porous silicon (PS) samples prepared by electrochemical etching is presented. The samples were measured at...

Temperature dependence of photoluminescence peaks of porous silicon structures

Pubblicato online: 29 dic 2017

Pagine: 78 - 80

Ricevuto: 23 apr 2017

DOI: https://doi.org/10.1515/jee-2017-0062

Parole chiave
porous silicon, photoluminescence pectrum, Gaussian peaks, spectra evaluation

© 2017 Róbert Brunner et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Temperature dependence of photoluminescence peaks of porous silicon structures

Pubblicato online: 29 dic 2017

Pagine: 78 - 80

Ricevuto: 23 apr 2017

DOI: https://doi.org/10.1515/jee-2017-0062

Parole chiaveporous silicon, photoluminescence pectrum, Gaussian peaks, spectra evaluation

© 2017 Róbert Brunner et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Parole chiave
porous silicon, photoluminescence pectrum, Gaussian peaks, spectra evaluation