1. bookVolume 32 (2014): Edition 4 (December 2014)
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FP-LMTO study of structural, electronic, thermodynamic and optical properties of MgxCd1−x Se alloys

Publié en ligne: 19 Dec 2014
Volume & Edition: Volume 32 (2014) - Edition 4 (December 2014)
Pages: 719 - 728
Détails du magazine
License
Format
Magazine
eISSN
2083-134X
Première parution
16 Apr 2011
Périodicité
4 fois par an
Langues
Anglais

[1] Phillips M.C., Wang M.W., Swenberg J.F., Mccaldin J.O., Mcgill T.C., Appl. Phys. Lett., 61 (1992), 1962. http://dx.doi.org/10.1063/1.10835310.1063/1.108353Search in Google Scholar

[2] Jobst B., Hommel D., Lunz U., Gerhard T., Landwehr G., Appl. Phys. Lett., 69 (1996), 97. http://dx.doi.org/10.1063/1.11813210.1063/1.118132Search in Google Scholar

[3] Ferreira S.O., Sitter H., Krump R., Faschinger W., Brunthaler G., Sadowski J.T., Semicond. Sci. Tech., 10 (1995), 489. http://dx.doi.org/10.1088/0268-1242/10/4/01810.1088/0268-1242/10/4/018Search in Google Scholar

[4] Gaines J.M., Drenten R.R., Haberern K.W., Marshall T., Mensz P., Petruzzello J., Appl. Phys. Lett., 62 (1993), 2462. http://dx.doi.org/10.1063/1.10931910.1063/1.109319Search in Google Scholar

[5] Spiegel R., Bacher G., Herz K., Forchel A., Litz T., Waag A., Landwehr G., Phys. Rev. B, 53 (1996), 4544. http://dx.doi.org/10.1103/PhysRevB.53.454410.1103/PhysRevB.53.4544Search in Google Scholar

[6] Oh E., Parks C., Miotkowski I., Sciacca D.M., Mayur A.J., Ramdas A.K., Phys. Rev. B, 48 (1993), 15040. http://dx.doi.org/10.1103/PhysRevB.48.1504010.1103/PhysRevB.48.1504010008035Search in Google Scholar

[7] Jobst B., Hommel D., Lunz U., Gerhard T., Landwehr G., Appl. Phys. Lett., 69 (1996), 97. http://dx.doi.org/10.1063/1.11813210.1063/1.118132Search in Google Scholar

[8] Wang M.W., Phillips M.C., Swenberg J.F., Yu E.T., Mccaldin J.O., Mcgill T.C., J. Appl. Phys., 73 (1993), 4660. http://dx.doi.org/10.1063/1.35276110.1063/1.352761Search in Google Scholar

[9] Savrasov S., Savrasov D., Phys. Rev. B, 46 (1992), 12181. http://dx.doi.org/10.1103/PhysRevB.46.1218110.1103/PhysRevB.46.12181Search in Google Scholar

[10] Savrasov S.Y., Phys. Rev. B, 54 (1996), 16470. http://dx.doi.org/10.1103/PhysRevB.54.1647010.1103/PhysRevB.54.164709985771Search in Google Scholar

[11] Hohenberg P., Kohn W., Phys. Rev. B, 136 (1964), 864. http://dx.doi.org/10.1103/PhysRev.136.B86410.1103/PhysRev.136.B864Search in Google Scholar

[12] Kohn W., Sham L.J., Phys. Rev. A, 140 (1965), 1133. http://dx.doi.org/10.1103/PhysRev.140.A113310.1103/PhysRev.140.A1133Search in Google Scholar

[13] Savrasov S.Y., Z. Kristallogr., 220 (2005), 555. 10.1524/zkri.220.5.555.65067Search in Google Scholar

[14] Perdew J.P., Wang Y., Phys. Rev. B, 46 (1992), 12947. http://dx.doi.org/10.1103/PhysRevB.46.1294710.1103/PhysRevB.46.12947Search in Google Scholar

[15] Blochl P., Jepsen O., Andersen O.K., Phys. Rev. B, 49 (1994), 16223. http://dx.doi.org/10.1103/PhysRevB.49.1622310.1103/PhysRevB.49.16223Search in Google Scholar

[16] Murnaghan F.D., Proc. Natl. Acad. Sci. USA, 30 (1944), 244. http://dx.doi.org/10.1073/pnas.30.9.24410.1073/pnas.30.9.244107870416588651Search in Google Scholar

[17] Dismuckes J.P., Ekstrom L., Poff R.J., J. Phys. Chem., 68 (1964), 3021. http://dx.doi.org/10.1021/j100792a04910.1021/j100792a049Search in Google Scholar

[18] El Haj Hassan F., Akdarzadeh H., Mater. Sci. Eng. B, 121 (2005), 170. http://dx.doi.org/10.1016/j.mseb.2005.03.01910.1016/j.mseb.2005.03.019Search in Google Scholar

[19] Charifi Z., Baaziz H., El Haj Hassan F., Bouarissa N., J. Phys.-Condens. Mat., 17 (2005), 4083. http://dx.doi.org/10.1088/0953-8984/17/26/00810.1088/0953-8984/17/26/008Search in Google Scholar

[20] Vegard L., Z. Phys., 5 (1921), 17. http://dx.doi.org/10.1007/BF0134968010.1007/BF01349680Search in Google Scholar

[21] Jobst B., Hommel D., Lunz U., Gerhard T., Landwehr G., Appl. Phys. Lett., 69 (1996), 97. http://dx.doi.org/10.1063/1.11813210.1063/1.118132Search in Google Scholar

[22] El Haj Hassan F., Phys. Status Solidi B, 242 (2005), 909. http://dx.doi.org/10.1002/pssb.20040211010.1002/pssb.200402110Search in Google Scholar

[23] Zakharov O., Rubio A., Blase X., Cohen M.L., Louie S.G., Phys. Rev. B, 50 (1994), 10780. http://dx.doi.org/10.1103/PhysRevB.50.1078010.1103/PhysRevB.50.10780Search in Google Scholar

[24] Heyd J., Peralta J.E., Scuseria G.E., Martin R.L., J. Chem. Phys., 123(17) (2005), 174101. http://dx.doi.org/10.1063/1.208517010.1063/1.2085170Search in Google Scholar

[25] Yu P.Y., Cardona M., Fundamentals of Semiconductors, Springer, Berlin, 2001. Search in Google Scholar

[26] Chang Y.H., Park C.H., J. Korean Phys. Soc., 49 (2006), 485. 10.5124/jkma.2006.49.3.272Search in Google Scholar

[27] Okuyama H., Nakano K., Miyajima T., Akimato K., J. Cryst. Growth, 117 (1992), 139. http://dx.doi.org/10.1016/0022-0248(92)90732-X10.1016/0022-0248(92)90732-XSearch in Google Scholar

[28] Kalpana G., Palanivel B., Thomas R.M., Rajagopalan M., Physica B, 222 (1996), 223. http://dx.doi.org/10.1016/0921-4526(96)00014-210.1016/0921-4526(96)00014-2Search in Google Scholar

[29] Rached D., Benkhettou N., Soudini B., Abbar B., Sekkal N., Driz M., Phys. Status Solidi B, 240 (2003), 565. http://dx.doi.org/10.1002/pssb.20030188910.1002/pssb.200301889Search in Google Scholar

[30] Drief F., Tadjer A., Mesri D., Aourag H., Catal. Today, 89 (2004), 343. http://dx.doi.org/10.1016/j.cattod.2003.12.01310.1016/j.cattod.2003.12.013Search in Google Scholar

[31] Duman S., Bağci S., Tutuncu H.M., Srivastava G.P., Phys. Rev. B, 73 (2006), 205201. http://dx.doi.org/10.1103/PhysRevB.73.20520110.1103/PhysRevB.73.205201Search in Google Scholar

[32] Saib S., Bouarissa N., Rodríguez-Hernández P., Muñoz A., Eur. Phys. J. B, 73 (2010), 185. http://dx.doi.org/10.1140/epjb/e2009-00426-610.1140/epjb/e2009-00426-6Search in Google Scholar

[33] Wu Z., Cohen R.E., Phys. Rev. B, 37 (2006), 235116. http://dx.doi.org/10.1103/PhysRevB.73.23511610.1103/PhysRevB.73.235116Search in Google Scholar

[34] Duan Y., Shi H., Qin L., Phys. Lett. A, 372 (2008), 2930. http://dx.doi.org/10.1016/j.physleta.2008.01.01110.1016/j.physleta.2008.01.011Search in Google Scholar

[35] Duan Y., Li J., Li Sh.-Sh., Xia J.-B., J. Appl. Phys., 103 (2008), 023705. http://dx.doi.org/10.1063/1.283148610.1063/1.2831486Search in Google Scholar

[36] Maqbool M., Amin B., Ahmad I., J. Opt. Soc. Am. B, 26 (2009), 2180. 10.1364/JOSAB.26.002181Search in Google Scholar

[37] Derkowska B., Firszt F., Sahraoui B., Marasek A., Kujawa M., Opto-Electron. Rev., 16 (1) (2008), 8. http://dx.doi.org/10.2478/s11772-007-0029-110.2478/s11772-007-0029-1Search in Google Scholar

[38] Tsidilkovski I.M., Band Structure of Semiconductors, Elsevier Science & Technology Books, Amsterdam, 1982. 10.1016/B978-0-08-021657-7.50008-XSearch in Google Scholar

[39] Adachi S., Properties of Semiconductor Alloys: Group — IV, III — V and II — VI Semiconductors, John Wiley & Sons Ltd., 2009. http://dx.doi.org/10.1002/978047074438310.1002/9780470744383Search in Google Scholar

[40] Salcedo-Reyes J.C., Universitas Scientiarum, 13(2) (2008), 198. Search in Google Scholar

[41] Firszt F., Łęgowski S., Męczyńska H., Sekulska B., Szatkowski J., Zakrzewski J., Paszkowicz W., Acta Phys. Pol. A, 95(6) (1999), 991. 10.12693/APhysPolA.95.991Search in Google Scholar

[42] Hernández.calderón I., Optical properties and electronic structure of wide band gap II — VI semiconductors, in TAMARGO M.C., II — VI Semiconductor Materials and their Applications, Taylor and Francis, New York, 2002, 113. 10.1201/9780203751305-4Search in Google Scholar

[43] Okuyama H., Kishita Y., Ishibashi A., Phys. Rev. B, 57 (1998), 2257. http://dx.doi.org/10.1103/PhysRevB.57.225710.1103/PhysRevB.57.2257Search in Google Scholar

[44] Gökoğlu G., Durandurdu M., Gülseren O., Comp. Mater. Sci., 47(2) (2009), 593. http://dx.doi.org/10.1016/j.commatsci.2009.09.02910.1016/j.commatsci.2009.09.029Search in Google Scholar

[45] Bernard J.E., Zunger A., Phys. Rev. Lett., 34 (1986), 5992. 10.1103/PhysRevB.34.5992Search in Google Scholar

[46] Wei S.-H., Ferreira L.G., Bernard J.E., Zunger A., Phys. Rev. B, 42 (1990), 9622. http://dx.doi.org/10.1103/PhysRevB.42.962210.1103/PhysRevB.42.9622Search in Google Scholar

[47] Kaygorodov V.A., Sedova I.V., Sorokin S.V., Sitnikova A.A., Nekrutkina O.V., Shubina T.V., Toropov A.A., Sorokin V.S., Ivanov S.V., Phys. Status Solidi B, 19 (2002), 229. 10.1002/1521-3951(200201)229:1<19::AID-PSSB19>3.0.CO;2-JSearch in Google Scholar

[48] Hamizi N.A., Johan M.R., Int. J. Electrochem. Sc., 7 (2012), 8458. Search in Google Scholar

[49] Reddy R.R., Defence Sci. J., 53(3) (2003), 239. http://dx.doi.org/10.14429/dsj.53.227210.14429/dsj.53.2272Search in Google Scholar

[50] Singh J., Physics of Semiconductors and their Heterostructures, McGraw-Hill, 1993, 84. Search in Google Scholar

[51] Bieniewski T.M., Czyzak S.J., J. Opt. Soc. Am., 53 (1963), 496. http://dx.doi.org/10.1364/JOSA.53.00049610.1364/JOSA.53.000496Search in Google Scholar

[52] Huang M.Z., Ching W.Y., Phys. Rev. B, 47 (1993), 9449. http://dx.doi.org/10.1103/PhysRevB.47.944910.1103/PhysRevB.47.9449Search in Google Scholar

[53] Kootstra F., De Boeij P.L., Snijders J.G., Phys. Rev. B, 62 (2000), 7071. http://dx.doi.org/10.1103/PhysRevB.62.707110.1103/PhysRevB.62.7071Search in Google Scholar

[54] Szybowicz M., Kozielski M., Firszt F., Legowski S., Meczynska H., Szatkowski J., Paszkowicz W., Opto-Electron. Rev., 7(2) (1999), 103. Search in Google Scholar

[55] Blanco M.A., Francisco E., Lunana V., Comput. Phys. Commun., 158 (2004), 57. http://dx.doi.org/10.1016/j.comphy.2003.12.00110.1016/j.comphy.2003.12.001Search in Google Scholar

[56] Peng F., Fu H.Z., Cheng X.L., Physica B, 400 (2007), 83. http://dx.doi.org/10.1016/j.physb.2007.06.02010.1016/j.physb.2007.06.020Search in Google Scholar

[57] Peng F., Fu H.Z., Yang X.D., Solid State Commun., 145 (2008), 91. http://dx.doi.org/10.1016/j.ssc.2007.10.03010.1016/j.ssc.2007.10.030Search in Google Scholar

[58] Peng F., Fu H.Z., Yang X.D., Physica B, 403 (2008), 2851. http://dx.doi.org/10.1016/j.physb.2008.02.02210.1016/j.physb.2008.02.022Search in Google Scholar

[59] Blanco M.A., Pendas A.M., Francisco E., Recio J.M., Franko R., J. Mol. Struct., 368 (1996), 245. http://dx.doi.org/10.1016/S0166-1280(96)90571-010.1016/S0166-1280(96)90571-0Search in Google Scholar

[60] Debye P., Ann. Phys.-Berlin, 344(14) (1912), 789. http://dx.doi.org/10.1002/andp.1912344140410.1002/andp.19123441404Search in Google Scholar

[61] Petit A.T., Dulong P.L., Ann. Chim. Phys., 10 (1819), 395. Search in Google Scholar

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