Accès libre

Parameter optimization for wire-cut electrical discharge machining of stir cast AA6063 alloy/SiC (black and green) using Taguchi method with grey relational analysis

R Raj Kumar
R Raj Kumar
, 
Gnana Prasanna
Gnana Prasanna
 et 
G S Hikku
G S Hikku
   | 18 juin 2022
Materials Science-Poland's Cover Image
À propos de cet article
Article précédent
Article suivant
Citez
Publié en ligne: 18 juin 2022
Pages: 68 - 83
Reçu: 13 nov. 2021
Accepté: 11 avr. 2022
DOI: https://doi.org/10.2478/msp-2022-0011
Mots clés
© 2022 Raj Kumar R et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

XRD patterns of (A) SiCb, (B) SiCg, and (C) AA6063. XRD, X-ray diffraction
XRD patterns of (A) SiCb, (B) SiCg, and (C) AA6063. XRD, X-ray diffraction

Fig. 2

SEM images of (A) SiCb and (B) SiCg. SEM, scanning electron microscopy
SEM images of (A) SiCb and (B) SiCg. SEM, scanning electron microscopy

Fig. 3

Influence of the input factors on the S/N ratio of (A) MRR-1, (B) Ra-1, (C) MRR-2, and (D) Ra-2. MRR-1, material removal rate; Ra, surface roughness; S/N, signal-to-noise
Influence of the input factors on the S/N ratio of (A) MRR-1, (B) Ra-1, (C) MRR-2, and (D) Ra-2. MRR-1, material removal rate; Ra, surface roughness; S/N, signal-to-noise

Fig. 4

SEM micrographs of WEDM-processed surfaces: (A, B) AA6063/SiCb and (C, D) AA6063/SiCg. SEM, scanning electron microscopy; WEDM, wire-cut electrical discharge machining
SEM micrographs of WEDM-processed surfaces: (A, B) AA6063/SiCb and (C, D) AA6063/SiCg. SEM, scanning electron microscopy; WEDM, wire-cut electrical discharge machining

Fig. 5

Texture analysis from Figure 4B (i–iii) and Figure 4D (iv–vi) at three different positions using Gwyddion image processing software (the red arrow denotes the 100-count mark)
Texture analysis from Figure 4B (i–iii) and Figure 4D (iv–vi) at three different positions using Gwyddion image processing software (the red arrow denotes the 100-count mark)

Fig. 6

EDX mapping analysis over the machined surface of AA6063/SiCb. EDX, energy dispersive X-ray spectroscopy; C, carbon; O, oxygen; Mg, magnesium; Al, aluminium; Si, silicon
EDX mapping analysis over the machined surface of AA6063/SiCb. EDX, energy dispersive X-ray spectroscopy; C, carbon; O, oxygen; Mg, magnesium; Al, aluminium; Si, silicon

Fig. 7

EDX mapping analysis over the machined surface of AA6063/SiCg. EDX, energy dispersive X-ray spectroscopy; C, carbon; O, oxygen; Mg, magnesium; Al, aluminium; Si, silicon
EDX mapping analysis over the machined surface of AA6063/SiCg. EDX, energy dispersive X-ray spectroscopy; C, carbon; O, oxygen; Mg, magnesium; Al, aluminium; Si, silicon

Fig. 8

SEM micrograph of debris generated from (A and B) AA6063/SiCb and (C and D) AA6063/SiCg. EDX analysis of debris generated from (E) AA6063/SiCb and (F) AA6063/SiCg. EDX, energy dispersive X-ray spectroscopy; SEM, scanning electron microscopy
SEM micrograph of debris generated from (A and B) AA6063/SiCb and (C and D) AA6063/SiCg. EDX analysis of debris generated from (E) AA6063/SiCb and (F) AA6063/SiCg. EDX, energy dispersive X-ray spectroscopy; SEM, scanning electron microscopy

Fig. S1

Experimental vs predicted values for (A) MRR-1, (B) Ra-1, (C) MRR-2, and (D) Ra-2. MRR, material removal rate; Ra, surface roughness
Experimental vs predicted values for (A) MRR-1, (B) Ra-1, (C) MRR-2, and (D) Ra-2. MRR, material removal rate; Ra, surface roughness

Grey relational analysis for the WEDM process of AA6063/SiCb

Experimental data Normalized data Grey relational coefficients GRG-1 Rank
MRR-1 Ra-1 MRR-1 Ra-1 MRR-1 Ra-1
8.57 1.88 0 0.613 0.333 0.564 0.449 9
9.09 1.59 0.103 0.759 0.358 0.675 0.516 7
9.78 1.11 0.240 1.000 0.397 1.000 0.698 1
10.51 1.65 0.385 0.729 0.448 0.648 0.548 6
11.23 1.67 0.528 0.719 0.514 0.640 0.577 5
11.86 2.45 0.653 0.327 0.590 0.426 0.508 8
13.25 2.56 0.929 0.271 0.875 0.407 0.641 4
13.52 3.09 0.982 0.005 0.966 0.334 0.650 3
13.61 3.10 1.000 0.000 1.000 0.333 0.667 2

Experimental design for L9 orthogonal array and the experimental data

Sl. no. TON WF FP AA6063/SiCb AA6063/SiCg
MRR-1 (mm3/min) Ra-1 (μm) MRR-2 (mm3/min) Ra-2 (μm)
1 50 6 1 8.57 1.88 8.81 1.82
2 50 12 2 9.09 1.59 9.27 1.63
3 50 18 3 9.78 1.11 9.94 1.24
4 75 6 2 10.51 1.65 10.83 1.69
5 75 12 3 11.23 1.67 11.19 1.81
6 75 18 1 11.86 2.45 11.98 2.40
7 100 6 3 13.25 2.56 13.05 2.72
8 100 12 1 13.52 3.09 13.66 3.05
9 100 18 2 13.61 3.10 14.13 3.17

ANOVA for MRR-1, Ra-1, MRR-2, and Ra-2

Response Source DF Adj. SS F-value P-value
MRR-1R2 = 99.65% TON 2 27.9286 268.49 0.004
WF 2 1.4216 13.67 0.068
FP 2 0.1940 1.87 0.349
Error 2 0.1040
Total 8 29.6483
Ra-1R2 = 96.64% TON 2 3.07616 22.98 0.042
WF 2 0.05429 0.41 0.712
FP 2 0.72142 5.39 0.157
Error 2 0.13389
Total 8 3.98576
MRR-2R2 = 97.82% TON 2 27.4332 1818.10 0.001
WF 2 1.8955 125.62 0.008
FP 2 0.0138 0.91 0.523
Error 2 0.0151
Total 8 29.3575
Ra-2R2 = 96.26% TON 2 3.19647 22.69 0.042
WF 2 0.05627 0.40 0.715
FP 2 0.37520 2.66 0.273
Error 2 0.14087
Total 8 3.76880

Input machining parameters for both AA6063/SiCg and AA6063/SiCb composites and their levels

Factor Symbol Units Level
Level 1 Level 2 Level 3
Pulse on time TON μs 50 75 100
Wire Feed WF m/min 6 12 18
Flushing Pressure FP MPa 1 2 3

Grey relational analysis for the WEDM process of AA6063/SiCg

Experimental data Normalized data Grey relational coefficients GRG-1 Rank
MRR-2 Ra-2 MRR-2 Ra-2 MRR-2 Ra-2
8.81 1.82 0 0.699 0.333 0.625 0.479 9
9.27 1.63 0.086 0.798 0.354 0.712 0.533 7
9.94 1.24 0.212 1.000 0.388 1.000 0.694 1
10.83 1.69 0.379 0.767 0.446 0.682 0.564 4
11.19 1.81 0.447 0.705 0.475 0.629 0.552 6
11.98 2.40 0.596 0.399 0.553 0.454 0.504 8
13.05 2.72 0.797 0.233 0.711 0.395 0.553 5
13.66 3.05 0.912 0.062 0.850 0.348 0.599 3
14.13 3.17 1.000 0.000 1.000 0.333 0.667 2
eISSN:
2083-134X
Langue:
Anglais
Périodicité:
4 fois par an
Sujets de la revue:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
RSS Feed de la revue