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Growth, characterization and optical properties of potassium iodide (KI) doped potassium hydrogen phthalate (KHP) single crystals for optoelectronic applications

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[1] Rajashekaran R., Mohankumar R., Jayavel R., Ramasamy P., J. Cryst. Growth, 252 (2003), 317.10.1016/S0022-0248(02)02467-3Search in Google Scholar

[2] Kejalakshmy N., Srinivasan K., J. Phys. D: Appl. Phys, 36 (2003), 1778.10.1088/0022-3727/36/15/305Search in Google Scholar

[3] Loiacono G.M., Osborne W.N., J. Cryst. Growth, 43 (1978), 401.10.1016/0022-0248(78)90337-8Open DOISearch in Google Scholar

[4] Kejalakshmy N., Srinivasan K., Opt. Mater., 27 (2004), 389.10.1016/j.optmat.2004.09.005Open DOISearch in Google Scholar

[5] Bairava Ganesh R., Kannan V., Meera K., Rajesh N.P., Ramasamy P., J. Cryst. Growth, 282 (2005), 429.10.1016/j.jcrysgro.2005.05.034Search in Google Scholar

[6] Ecolivet C., Miniewicz A., Sanquer M., J. Phys. Chem. Solids, 53 (1992), 511.10.1016/0022-3697(92)90095-USearch in Google Scholar

[7] Miyashita Y.O., Murakami A., Aoki K., Yamaguchi S., Proc. SPIE-Inter. Soc. Opt. Eng., 1503 (1991), 436.Search in Google Scholar

[8] Miniewicz A., Bartkiewicz S., Adv. Mater. Opt. Electron., 2 (1993), 157.10.1002/amo.860020402Search in Google Scholar

[9] Enculescu M., Physica B, 405 (2010), 3722.10.1016/j.physb.2010.05.074Search in Google Scholar

[10] Beck L., Stemmler P., Legrand F., Rev. Sci. Instrum., 66 (1995), 1601.10.1063/1.1145920Search in Google Scholar

[11] Shankar M.V., Verma K.B.R., Ferro. Lett, 21 (1996), 55.10.1080/07315179608204744Search in Google Scholar

[12] Sirdeshmukh D.B., Srinivas K., J. Mater. Sci., 21 (1986), 4117.10.1007/BF01106517Open DOISearch in Google Scholar

[13] Ester G.R., Halfpenny, J. Cryst. Growth, 187 (1998), 111.10.1016/S0022-0248(97)00844-0Search in Google Scholar

[14] Niraimathi V., Aroumoji P.M., Anbarasan G., Rajarajan G., J. Opt. Adv. Mater, 15 (2015), 205.Search in Google Scholar

[15] Raju R.K., Dharmaprakash S.M., Subhash H.J., Jayanna H.S., Mater. Res. Innov., 22 (2018), 200.Search in Google Scholar

[16] Benedict J.B., Wallace P.M., Reid P.J., Jang S.H., Adv. Mater., 15 (2003), 1068.10.1002/adma.200303715Search in Google Scholar

[17] Bhagavannarayana G., Kushwaha S.K., J. Appl. Cryst., 43 (2010), 154.10.1107/S0021889809050560Search in Google Scholar

[18] Bhagavannarayana G., Parthiban S., Meenakshisundaram S., J. Appl. Cryst, 39 (2006), 784.10.1107/S0021889806033139Search in Google Scholar

[19] Krishnan C., Selvarajan P., Freeda T.H., Mahadevan C.K., Physica B, 404 (2009), 289.10.1016/j.physb.2008.10.053Search in Google Scholar

[20] Goma S., Padma C.M., Mahadevan C.K., Mater. Lett., 60 (2006), 3701.10.1016/j.matlet.2006.03.092Open DOISearch in Google Scholar

[21] Kumaresan P., Moorthy Babu S., Anbarasan P.M., Mat. Res. Bull., 43 (2008), 1716.10.1016/j.materresbull.2007.07.018Search in Google Scholar

[22] Praveen V.N., Vijayan N., Mahadevan C.K., Bhagavnnarayana G., Mater. Manuf. Processes, 23 (2008), 816.10.1080/10426910802384623Search in Google Scholar

[23] Sudhahar S., Krishna Kumar M., Jayaramakrishnan V., Muralidharan R., Mohan Kumar R., J. Mater. Sci. Technol., 30 (2014), 13.10.1016/j.jmst.2013.08.017Search in Google Scholar

[24] Ramsamy G., Parthiban S., Meenakshisundaram S., Mojumdar S.C., J. Therm.Anal. Calorim., 100 (2010), 861.10.1007/s10973-010-0678-zOpen DOISearch in Google Scholar

[25] Deepa G., Freeda T.H., Mahadevan C.K., Indian J. Phys., 76 (2002), 369.Search in Google Scholar

[26] Krishan C., Selvarajan P., Freeda T.H., J. Mater. Lett., 62 (2008), 4414.10.1016/j.matlet.2008.07.045Open DOISearch in Google Scholar

[27] Kannan V., Bairava Ganesh R., Sathyalakshmi R., Rajesh N.P., Ramasamy P., Cryst. Res. Technol., 41 (2006), 678.10.1002/crat.200510648Open DOISearch in Google Scholar

[28] Dhanraj P.V., Mahadevan C.K., Bhagvannarayana G., Ramasamy G., Rajesh N.P., J. Cryst. Growth, 310 (2008), 5341.10.1016/j.jcrysgro.2008.09.019Search in Google Scholar

[29] Bhagavannarayana G., Kushwaha S.K., Parthiban S., Meenakshisundaram S., J. Cryst. Growth, 311 (2009), 960.10.1016/j.jcrysgro.2008.09.116Search in Google Scholar

[30] Freeda T.H., Mahadevan C.K., Bull. Mater. Sci., 23 (2000), 335.10.1007/BF02720093Search in Google Scholar

[31] Mott N.F., Davis E.A., Electronic Processes in Non-crystalline Materials, Oxford Clarendon, London, 1979.Search in Google Scholar

[32] Kurtz S.K., Perry J.J., J. Appl. Phys., 39 (1968), 3798.10.1063/1.1656857Search in Google Scholar

[33] Meenakshisundaram S., Parthiban S., Sarathi N., J. Cryst. Growth, 293 (2006), 376.10.1016/j.jcrysgro.2006.04.094Search in Google Scholar

[34] Vasudevan G., Anbusrinivasan P., Madhurambal G., Mojumdar S.C., J. Therm. Anal. Calorim., 96 (2009), 99.10.1007/s10973-008-9880-7Open DOISearch in Google Scholar

[35] Prakash T.J.J., Ekadevasena S., J. Mater. Sci: Mater. Electron., 28 (2017), 7393.10.1007/s10854-017-6428-2Open DOISearch in Google Scholar

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