<abstract xmlns="http://www.w3.org/1999/xhtml">Polycrystalline chalcogenide semiconductors play a vital role in solar cell applications due to their outstanding electrical and optical properties. Among the chalcogenide semi-conductors, CdZnS is one kind of such important material for applications in various modern solid state devices such as solar cells, light emitting diode, detector etc. Due to their applications in numerous electro-optic devices, group II-VI semiconductors have been studied extensively. In recent years, major attention has been given to the study of electrical and optical properties of CdZnS thin films. In this work, Cd1−xZnxS thin films were prepared by chemical bath deposition technique. Phase purity and surface morphology properties were analyzed using field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD) studies. Chemical composition was studied using energy dispersive spectrophotometry (EDS). Optical band gap property was investigated using UV-Spectroscopy. Electrical conductivity studies were performed by two probe method and thermoelectric power setup (TEP) to determine the type of the material. This work reports the effect of Zn on structural, electrical, microstructural and optical properties of these films.</abstract>

Polycrystalline chalcogenide semiconductors play a vital role in solar cell applications due to their outstanding electrical and optical properties. Among the chalcogenide semi-conductors, CdZnS is one kind of such important material for applications in various modern solid state devices such as solar cells, light emitting diode, detector etc. Due to their applications in numerous electro-optic devices, group II-VI semiconductors have been studied extensively. In recent years, major attention has been given to the study of electrical and optical properties of CdZnS thin films. In this work, Cd1−xZnxS thin films were prepared by chemical bath deposition technique. Phase purity and surface morphology properties were analyzed using field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD) studies. Chemical composition was studied using energy dispersive spectrophotometry (EDS). Optical band gap property was investigated using UV-Spectroscopy. Electrical conductivity studies were performed by two probe method and thermoelectric power setup (TEP) to determine the type of the material. This work reports the effect of Zn on structural, electrical, microstructural and optical properties of these films.

Synthesis and characterization of high-efficiency low-cost solar cell thin film

Department of Physics, EGS Pillay Engineering College (Autonomous)

Research Department of Physics American College

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Synthesis and characterization of high-efficiency low-cost solar cell thin film"}

Polycrystalline chalcogenide semiconductors play a vital role in solar cell applications due to their outstanding electrical and optical properties. Among the...

Synthesis and characterization of high-efficiency low-cost solar cell thin film

Publié en ligne: 06 mars 2019

Pages: 127 - 135

Reçu: 19 juil. 2018

Accepté: 09 janv. 2019

DOI: https://doi.org/10.2478/msp-2019-0005

Mots clés
semiconductors, CdZnS, electrodeposition, FESEM, XRD, EDS

© 2019 W. Christopher Immanuel et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Synthesis and characterization of high-efficiency low-cost solar cell thin film

Publié en ligne: 06 mars 2019

Pages: 127 - 135

Reçu: 19 juil. 2018

Accepté: 09 janv. 2019

DOI: https://doi.org/10.2478/msp-2019-0005

Mots cléssemiconductors, CdZnS, electrodeposition, FESEM, XRD, EDS

© 2019 W. Christopher Immanuel et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Mots clés
semiconductors, CdZnS, electrodeposition, FESEM, XRD, EDS