<abstract xmlns="http://www.w3.org/1999/xhtml">

<p>This work deals with the production of porous silicon samples by electrochemical etching method and their analysis using FTIR and Raman spectroscopy. Porous silicon samples were prepared under various conditions, such as etching time and current density. A p-type silicon substrate was used to prepare the porous silicon structures. FTIR spectroscopy was performed to determine the chemical bonds formed during the etching process. The structural properties of the prepared samples were investigated by Raman spectroscopy.</p>
</abstract>

This work deals with the production of porous silicon samples by electrochemical etching method and their analysis using FTIR and Raman spectroscopy. Porous silicon samples were prepared under various conditions, such as etching time and current density. A p-type silicon substrate was used to prepare the porous silicon structures. FTIR spectroscopy was performed to determine the chemical bonds formed during the etching process. The structural properties of the prepared samples were investigated by Raman spectroscopy.

Analysis of porous silicon structures using FTIR and Raman spectroscopy

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

{"article-title":"Analysis of porous silicon structures using FTIR and Raman spectroscopy"}

This work deals with the production of porous silicon samples by electrochemical etching method and their analysis using FTIR and Raman spectroscopy. Porous...

Analysis of porous silicon structures using FTIR and Raman spectroscopy

Publié en ligne: 22 juil. 2023

Pages: 218 - 227

Reçu: 21 févr. 2023

DOI: https://doi.org/10.2478/jee-2023-0028

Mots clés
electrochemical etching, FTIR spectroscopy, Raman spectroscopy, porous silicon

© 2023 Martin Králik et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Analysis of porous silicon structures using FTIR and Raman spectroscopy

Publié en ligne: 22 juil. 2023

Pages: 218 - 227

Reçu: 21 févr. 2023

DOI: https://doi.org/10.2478/jee-2023-0028

Mots cléselectrochemical etching, FTIR spectroscopy, Raman spectroscopy, porous silicon

© 2023 Martin Králik et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Mots clés
electrochemical etching, FTIR spectroscopy, Raman spectroscopy, porous silicon