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This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO2 layer and TiO2 protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO2 layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO2. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO2 layer thickness is discussed in the paper. Results revealed that utilization of TiO2 layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.
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This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO2 layer and TiO2 protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO2 layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO2. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO2 layer thickness is discussed in the paper. Results revealed that utilization of TiO2 layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.

Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Development and characterisation of photoelectrochemical MIS structures with RuO/TiO gate stacs for water oxidation

This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO2 layer...

Development and characterisation of photoelectrochemical MIS structures with RuO₂/TiO₂ gate stacs for water oxidation

Publié en ligne: 15 juil. 2021

Pages: 203 - 207

Reçu: 03 mai 2021

DOI: https://doi.org/10.2478/jee-2021-0028

Mots clés
MIS, RuO, TiO, water splitting, water oxidation

© 2021 Miroslav Mikolášek et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

Publié en ligne: 15 juil. 2021

Pages: 203 - 207

Reçu: 03 mai 2021

DOI: https://doi.org/10.2478/jee-2021-0028

Mots clésMIS, RuO, TiO, water splitting, water oxidation

© 2021 Miroslav Mikolášek et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Development and characterisation of photoelectrochemical MIS structures with RuO₂/TiO₂ gate stacs for water oxidation

Mots clés
MIS, RuO, TiO, water splitting, water oxidation