Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

Publié en ligne: 10 nov. 2015

Pages: 277 - 281

Reçu: 14 juil. 2015

DOI: https://doi.org/10.2478/jee-2015-0045

Mots clés

boron doped diamond, zinc oxide, Raman spectroscopy, bipolar heterostructure, wide-bandgap

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

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