<abstract xmlns="http://www.w3.org/1999/xhtml">In this paper we present the capacitance study of the intrinsic amorphous silicon/crystalline silicon heterostructure with the aim to gain insight on the heterointerface properties of a passivated silicon heterojunction solar cell. It is shown that due to the high density of defect states in the amorphous layer the structure has to be analyzed as a heterojunction. Using the analysis, the following values have been determined: conduction-band offset of 0.13 eV, electron affinity of 3.92 eV, and density of defect states in the intrinsic amorphous silicon being that of 4.14 X 1021m—3.</abstract>

In this paper we present the capacitance study of the intrinsic amorphous silicon/crystalline silicon heterostructure with the aim to gain insight on the heterointerface properties of a passivated silicon heterojunction solar cell. It is shown that due to the high density of defect states in the amorphous layer the structure has to be analyzed as a heterojunction. Using the analysis, the following values have been determined: conduction-band offset of 0.13 eV, electron affinity of 3.92 eV, and density of defect states in the intrinsic amorphous silicon being that of 4.14 X 1021m—3.

Capacitance Analysis of the Structures with the a-Si:H(i)/c-Si(p) Heterojunction for Solar-Cell Applications

Institute of Electronics and Photonics, Department of Microelectronics, FEI STU, Bratislava, Slovakia

Institute of Informatics, Slovak Academy of Sciences, Bratislava, Slovakia

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

In this paper we present the capacitance study of the intrinsic amorphous silicon/crystalline silicon heterostructure with the aim to gain insight on the...

Capacitance Analysis of the Structures with the a-Si:H(i)/c-Si(p) Heterojunction for Solar-Cell Applications

Publié en ligne: 21 août 2014

Pages: 254 - 258

Reçu: 14 nov. 2013

DOI: https://doi.org/10.2478/jee-2014-0039

Mots clés
capacitance-voltage measurements, a-Si:H(i)/c-Si(p) heterojunction, Si heterojunction solar cells

© 2014 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Capacitance Analysis of the Structures with the a-Si:H(i)/c-Si(p) Heterojunction for Solar-Cell Applications

Publié en ligne: 21 août 2014

Pages: 254 - 258

Reçu: 14 nov. 2013

DOI: https://doi.org/10.2478/jee-2014-0039

Mots cléscapacitance-voltage measurements, a-Si:H(i)/c-Si(p) heterojunction, Si heterojunction solar cells

© 2014 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Mots clés
capacitance-voltage measurements, a-Si:H(i)/c-Si(p) heterojunction, Si heterojunction solar cells