Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-(O)/SWCNT/p- GaN and Au/Ni-Mg-O/p-GaN, thus with and without an interlaying layer of single-walled carbon nanotubes (SWCNT). The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with and without a low concentration of oxygen (cca 0.2 at%). The contacts were annealed in N2 . We have found that the structure containing the SWCNT interlayer exhibits lower values of contact resistivity in comparison with an otherwise identical contact without the SWCNT interlayer