<abstract xmlns="http://www.w3.org/1999/xhtml">
				
				The main subject of the presented research is to investigate the dielectric properties of BaBi1.8Ln0.2Nb2O9 (Ln = Ce, Gd) ceramics prepared by conventional solid state reaction route. The materials were examined using XRD and FT-IR methods. Moreover, the AC conductivity, dielectric constant and dielectric loss of the ceramics were determined. X-ray diffraction confirmed that all these compounds crystallize in an orthorhombic structure. Fourier transform infrared spectroscopy study confirmed the presence of two characteristic vibration bands located at around 617 cm-1 and 818 cm-1 for BaBi2Nb2O9. The experimental results show that the substitution of Bi by Ce or Gd causes a decrease in Curie temperature, dielectric constant and dielectric loss. 
			</abstract>

The main subject of the presented research is to investigate the dielectric properties of BaBi1.8Ln0.2Nb2O9 (Ln = Ce, Gd) ceramics prepared by conventional solid state reaction route. The materials were examined using XRD and FT-IR methods. Moreover, the AC conductivity, dielectric constant and dielectric loss of the ceramics were determined. X-ray diffraction confirmed that all these compounds crystallize in an orthorhombic structure. Fourier transform infrared spectroscopy study confirmed the presence of two characteristic vibration bands located at around 617 cm-1 and 818 cm-1 for BaBi2Nb2O9. The experimental results show that the substitution of Bi by Ce or Gd causes a decrease in Curie temperature, dielectric constant and dielectric loss.

Preparation and dielectric properties of BaBi1.8Ln0.2Nb2O9 (Ln = Ce, Gd) ceramics

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Preparation and dielectric properties of BaBiLnNbO (Ln = Ce, Gd) ceramics

The main subject of the presented research is to investigate the dielectric properties of BaBi1.8Ln0.2Nb2O9 (Ln = Ce, Gd) ceramics prepared by conventional...

Preparation and dielectric properties of BaBi_1.8Ln_0.2Nb₂O₉ (Ln = Ce, Gd) ceramics

Publié en ligne: 18 mai 2018

Pages: 46 - 50

Reçu: 25 févr. 2017

Accepté: 17 févr. 2018

DOI: https://doi.org/10.1515/msp-2018-0027

Mots clés
BaBi2Nb2O9, structure, dielctrics

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Preparation and dielectric properties of BaBi1.8Ln0.2Nb2O9 (Ln = Ce, Gd) ceramics

Publié en ligne: 18 mai 2018

Pages: 46 - 50

Reçu: 25 févr. 2017

Accepté: 17 févr. 2018

DOI: https://doi.org/10.1515/msp-2018-0027

Mots clésBaBi2Nb2O9, structure, dielctrics

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Preparation and dielectric properties of BaBi_1.8Ln_0.2Nb₂O₉ (Ln = Ce, Gd) ceramics

Mots clés
BaBi2Nb2O9, structure, dielctrics