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Materials Science-Poland
Édition 35 (2017): Edition 2 (July 2017)
Accès libre
Influence of Bi
3+
content on photoluminescence of InNbO
4
:Eu
3+
,Bi
3+
for white light-emitting diodes
An Tang
An Tang
,
Liduo Gu
Liduo Gu
,
Fengxiang Shao
Fengxiang Shao
,
Xidong Liu
Xidong Liu
,
Yongtao Zhao
Yongtao Zhao
,
Haijun Chen
Haijun Chen
et
Hongsong Zhang
Hongsong Zhang
| 26 juil. 2017
Materials Science-Poland
Édition 35 (2017): Edition 2 (July 2017)
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Publié en ligne:
26 juil. 2017
Pages:
435 - 439
Reçu:
05 déc. 2016
Accepté:
25 avr. 2017
DOI:
https://doi.org/10.1515/msp-2017-0053
Mots clés
red-emitting phosphor
,
photoluminescence properties
,
white LEDs
,
InNbO4
,
solid-state reaction
© 2017
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
An Tang
Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou,
Henan, China
Liduo Gu
Department of Mechanics, Henan Mechanical and Electrical Vocational College, Zhengzhou,
Henan, China
Fengxiang Shao
Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou,
Henan, China
Xidong Liu
Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou,
Henan, China
Yongtao Zhao
Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou,
Henan, China
Haijun Chen
Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou,
Henan, China
Hongsong Zhang
Department of Mechanical Engineering, Henan Institute of Engineering, Zhengzhou,
Henan, China