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Effect of TEA on characteristics of CdS/PbS thin film solar cells prepared by CBD

H. Sattarian
H. Sattarian
, 
T. Tohidi
T. Tohidi
 et 
SH. Rahmatallahpur
SH. Rahmatallahpur
   | 12 sept. 2016
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Article Category: Research Article
Publié en ligne: 12 sept. 2016
Pages: 540 - 547
Reçu: 08 oct. 2015
Accepté: 30 mai 2016
DOI: https://doi.org/10.1515/msp-2016-0072
Mots clés
© 2016 H. Sattarian et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

Schematic diagram of a fabricated solar cell.
Schematic diagram of a fabricated solar cell.

Fig. 2

XRD patterns of (a) CdS thin films and PbS films (b) with and (c) without TEA.
XRD patterns of (a) CdS thin films and PbS films (b) with and (c) without TEA.

Fig. 3

SEM images of (a) CdS thin films and PbS films (b) with and (c) without TEA.
SEM images of (a) CdS thin films and PbS films (b) with and (c) without TEA.

Fig. 4

The optical absorption of CdS sample at wavelengths of 300 nm to 1100 nm. The inset presents the diagram normally used to determine the band-gap of films.
The optical absorption of CdS sample at wavelengths of 300 nm to 1100 nm. The inset presents the diagram normally used to determine the band-gap of films.

Fig. 5

The transmittance and reflectance of CdS thin film from the near-ultraviolet (300 nm) to the near-infrared (1100 nm) regions.
The transmittance and reflectance of CdS thin film from the near-ultraviolet (300 nm) to the near-infrared (1100 nm) regions.

Fig. 6

The transmission and reflection spectra of PbS films with different thicknesses, 200 nm for PbS-A and 800 nm for PbS-B, deposited on glass in the spectral range of 300 nm to 2600 nm.
The transmission and reflection spectra of PbS films with different thicknesses, 200 nm for PbS-A and 800 nm for PbS-B, deposited on glass in the spectral range of 300 nm to 2600 nm.

Fig. 7

Variation of (αhν)2 with photon energy for PbS thin films. The estimated band gap is about 1.47 eV for PbS-A and 0.64 eV for PbS-B.
Variation of (αhν)2 with photon energy for PbS thin films. The estimated band gap is about 1.47 eV for PbS-A and 0.64 eV for PbS-B.

Fig. 8

The (J-V) characteristics of SCPbS-A and SCPbS-B solar cells under illumination condition of 90 mW/cm2.
The (J-V) characteristics of SCPbS-A and SCPbS-B solar cells under illumination condition of 90 mW/cm2.
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Langue:
Anglais
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Sujets de la revue:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
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