Accès libre

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

Hyojeong Choi
Hyojeong Choi
, 
Han Soo Kim
Han Soo Kim
, 
Joon-Ho Oh
Joon-Ho Oh
, 
Dong Jin Kim
Dong Jin Kim
, 
Young Soo Kim
Young Soo Kim
, 
Jong-Seo Chai
Jong-Seo Chai
 et 
Jang Ho Ha
Jang Ho Ha
   | 08 sept. 2016
Materials Science-Poland's Cover Image
À propos de cet article
Article précédent
Article suivant
Citez
Article Category: Research Article
Publié en ligne: 08 sept. 2016
Pages: 487 - 493
Reçu: 17 juin 2015
Accepté: 17 mai 2016
DOI: https://doi.org/10.1515/msp-2016-0066
Mots clés
© 2016 Hyojeong Choi et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

Four CdTe ingots used in this study: un-doped, doped with Cl at concentrations of 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3.
Four CdTe ingots used in this study: un-doped, doped with Cl at concentrations of 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3.

Fig. 2

XRD measurement results of 12 samples from four ingots with different Cl doping concentrations, chosen from top, middle and bottom sections, respectively.
XRD measurement results of 12 samples from four ingots with different Cl doping concentrations, chosen from top, middle and bottom sections, respectively.

Fig. 3

Typical IR microscope images of Te inclusions for three samples with Cl doping concentrations of 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3. The solid lines appearing on the surfaces might be due to the scratches induced by incompletely optimized polishing processes.
Typical IR microscope images of Te inclusions for three samples with Cl doping concentrations of 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3. The solid lines appearing on the surfaces might be due to the scratches induced by incompletely optimized polishing processes.

Fig. 4

Histogram of Te inclusions size distribution for three Cl-doped CdTe samples.
Histogram of Te inclusions size distribution for three Cl-doped CdTe samples.

Fig. 5

(a) Dielectric response curves of undoped and doped (1.99 × 1020 cm−3) CdTe sample, (b) α2vs. photon energy (hν, in eV) with extrapolation of the linear part of the curves to α = 0, (c) second derivative plots of ε1 shown in Fig. 5a.
(a) Dielectric response curves of undoped and doped (1.99 × 1020 cm−3) CdTe sample, (b) α2vs. photon energy (hν, in eV) with extrapolation of the linear part of the curves to α = 0, (c) second derivative plots of ε1 shown in Fig. 5a.

Fig. 6

(a) Average resistivities of CdTe samples as a function of Cl doping concentrations. Solid fitting line was provided as a guide for the eyes; (b) average resistivities of CdTe samples from different locations within the ingots (Fig. 1). Solid fitting line was provided as a guide for the eyes.
(a) Average resistivities of CdTe samples as a function of Cl doping concentrations. Solid fitting line was provided as a guide for the eyes; (b) average resistivities of CdTe samples from different locations within the ingots (Fig. 1). Solid fitting line was provided as a guide for the eyes.

Average resistivities of the CdTe samples with different Cl doping concentrations and different positions within the ingots. Mean values for each row/column were also calculated and presented in the Table.

Top [Ω·cm]Middle [Ω·cm]Bottom [Ω·cm]Mean [Ω·cm]
Undoped5.20 × 1041.33 × 1041.60 × 1042.71 × 104
Cl doped, 4.97 × 1019cm−33.56 × 1065.70 × 1092.07 × 1092.59 × 109
Cl doped, 9.94 × 1019cm−31.06 × 1098.03 × 1093.35 × 1094.15 × 109
Cl doped, 1.99 × 1020cm−32.19 × 1091.44 × 10102.11 × 1096.22 × 109
Mean [Ω·cm]8.15 × 1087.02 × 1091.88 × 109
eISSN:
2083-134X
Langue:
Anglais
Périodicité:
4 fois par an
Sujets de la revue:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
RSS Feed de la revue