<abstract xmlns="http://www.w3.org/1999/xhtml"> In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n- lP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φb) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward ias I-V characteristics. It was seen that the Φb value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger tan the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP iode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP. </abstract>

In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n- lP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φb) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward ias I-V characteristics. It was seen that the Φb value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger tan the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP iode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP.

Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

Department of Physics, Faculty of Sciences and Arts, Batman University, Batman, Turkey

Department of Physics Eng., Faculty of Sciences, Istanbul Medeniyet University. Istanbul. Turkey

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer"}

In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n- lP semiconductor wafer with a biopolymer...

Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

Publié en ligne: 30 août 2016

Pages: 593 - 600

Reçu: 27 déc. 2014

Accepté: 01 juin 2015

DOI: https://doi.org/10.1515/msp-2015-0089

Mots clés
Schottky diodes, interfaces, semiconductors, electrical properties

© 2016

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

Publié en ligne: 30 août 2016

Pages: 593 - 600

Reçu: 27 déc. 2014

Accepté: 01 juin 2015

DOI: https://doi.org/10.1515/msp-2015-0089

Mots clésSchottky diodes, interfaces, semiconductors, electrical properties

© 2016

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Mots clés
Schottky diodes, interfaces, semiconductors, electrical properties