Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Publié en ligne: 14 mars 2017

Pages: 74 - 78

Reçu: 07 juil. 2016

DOI: https://doi.org/10.1515/jee-2017-0010

Mots clés

silicon vacancy centres, photoluminescence, low temperature, diamond, CVD

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.