<abstract xmlns="http://www.w3.org/1999/xhtml"><p> graphene is a promising material with excellent electrical, thermal, optical and mechanical properties. Therefore, it is a material of high relevance for various applications in many branches of technique. Graphene has received much attention recently in scientific community. The contribution reports formation and characterization of few-layer graphene (FLG) films on a SiC substrate from nickel silicide supersaturated with carbon by annealing at a favourable low temperature.</p></abstract>

graphene is a promising material with excellent electrical, thermal, optical and mechanical properties. Therefore, it is a material of high relevance for various applications in many branches of technique. Graphene has received much attention recently in scientific community. The contribution reports formation and characterization of few-layer graphene (FLG) films on a SiC substrate from nickel silicide supersaturated with carbon by annealing at a favourable low temperature.

Synthesis of Graphene on Ni/SiC Structure

University of Chemistry and Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Synthesis of Graphene on Ni/SiC Structure"}

graphene is a promising material with excellent electrical, thermal, optical and mechanical properties. Therefore, it is a material of high relevance for...

Synthesis of Graphene on Ni/SiC Structure

Publié en ligne: 14 mai 2016

Pages: 149 - 151

Reçu: 10 déc. 2015

DOI: https://doi.org/10.1515/jee-2016-0021

Mots clés
graphene, Ni/SiC structure, carbon segregation, Raman spectroscopy

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Synthesis of Graphene on Ni/SiC Structure

Publié en ligne: 14 mai 2016

Pages: 149 - 151

Reçu: 10 déc. 2015

DOI: https://doi.org/10.1515/jee-2016-0021

Mots clésgraphene, Ni/SiC structure, carbon segregation, Raman spectroscopy

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Mots clés
graphene, Ni/SiC structure, carbon segregation, Raman spectroscopy