<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Transport phenomena in silicon nanowires with different cross-section are investigated using an Extended Hydrodynamic model, coupled to the Schrödinger-Poisson system. The model has been formulated by closing the moment system derived from the Boltzmann equation on the basis of the maximum entropy principle of Extended Thermodynamics, obtaining explicit closure relations for the high-order fluxes and the production terms. Scattering of electrons with acoustic and non polar optical phonons have been taken into account. The bulk mobility is evaluated for square and equilateral triangle cross-sections of the wire.</p></abstract>

Transport phenomena in silicon nanowires with different cross-section are investigated using an Extended Hydrodynamic model, coupled to the Schrödinger-Poisson system. The model has been formulated by closing the moment system derived from the Boltzmann equation on the basis of the maximum entropy principle of Extended Thermodynamics, obtaining explicit closure relations for the high-order fluxes and the production terms. Scattering of electrons with acoustic and non polar optical phonons have been taken into account. The bulk mobility is evaluated for square and equilateral triangle cross-sections of the wire.

Electron transport in silicon nanowires having different cross-sections

Dipartimento di Matematica e Informatica, Università degli Studi di Catania, Italy

Communications in Applied and Industrial Mathematics

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Electron transport in silicon nanowires having different cross-sections"}

Transport phenomena in silicon nanowires with different cross-section are investigated using an Extended Hydrodynamic model, coupled to the Schrödinger-Poisson...

Electron transport in silicon nanowires having different cross-sections

Publié en ligne: 20 mai 2016

Pages: 8 - 25

Reçu: 03 janv. 2015

Accepté: 07 mai 2015

DOI: https://doi.org/10.1515/caim-2016-0003

Mots clés
Quantum wires, Semiconductors, Kinetic theory of gases

© 2016 Orazio Muscato et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Electron transport in silicon nanowires having different cross-sections

Publié en ligne: 20 mai 2016

Pages: 8 - 25

Reçu: 03 janv. 2015

Accepté: 07 mai 2015

DOI: https://doi.org/10.1515/caim-2016-0003

Mots clésQuantum wires, Semiconductors, Kinetic theory of gases

© 2016 Orazio Muscato et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Mots clés
Quantum wires, Semiconductors, Kinetic theory of gases