<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>A new noise modelling procedure of microwave field-effect transistors (FETs) valid for various bias conditions is suggested in this paper. The proposed procedure is based on transistor noise wave model. With the aim to improve the noise wave model accuracy, the modification of the model is done by inclusion of the error correction functions into the noise wave model equations. It leads to significant reduction of deviations between measured and simulated noise parameters and therefore better noise prediction is achieved. It is also shown that once determined error correction functions can be applied for accurate noise modelling of the same device for various bias conditions. The validity of the presented noise modelling approach is exemplified by modelling of a specific MESFET device in packaged form.</p></abstract>

A new noise modelling procedure of microwave field-effect transistors (FETs) valid for various bias conditions is suggested in this paper. The proposed procedure is based on transistor noise wave model. With the aim to improve the noise wave model accuracy, the modification of the model is done by inclusion of the error correction functions into the noise wave model equations. It leads to significant reduction of deviations between measured and simulated noise parameters and therefore better noise prediction is achieved. It is also shown that once determined error correction functions can be applied for accurate noise modelling of the same device for various bias conditions. The validity of the presented noise modelling approach is exemplified by modelling of a specific MESFET device in packaged form.

Bias Dependant Noise Wave Modelling Procedure of Microwave Fets

Faculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 14, Serbia

Journal of Electrical Engineering

{"article-title":"Bias Dependant Noise Wave Modelling Procedure of Microwave Fets"}

A new noise modelling procedure of microwave field-effect transistors (FETs) valid for various bias conditions is suggested in this paper. The proposed...

Bias Dependant Noise Wave Modelling Procedure of Microwave Fets

Publicado en línea: 20 abr 2012

Páginas: 120 - 124

DOI: https://doi.org/10.2478/v10187-012-0018-6

Palabras clave
MESFET, wave model, noise parameters, bias conditions

This content is open access.

Bias Dependant Noise Wave Modelling Procedure of Microwave Fets

Publicado en línea: 20 abr 2012

Páginas: 120 - 124

DOI: https://doi.org/10.2478/v10187-012-0018-6

Palabras claveMESFET, wave model, noise parameters, bias conditions

This content is open access.

Palabras clave
MESFET, wave model, noise parameters, bias conditions