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Gadolinium Scandate: Next Candidate for Alternative Gate Dielectric in CMOS Technology?


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The films of GdScO3 were prepared by liquid injection metal-organic chemical vapor deposition, MOCVD at 600 °C on (100) Si substrate. The as-deposited films were amorphous with a smooth surface and sharp GdScO3/Si interface. X-ray diffraction showed that the amorphous phase is well preserved upon rapid thermal annealing up to 1000 °C. It is shown, that exact stoichiometry of GdScO3 is not necessary to achieve dielectric constant above 20.

ISSN:
1335-3632
Idioma:
Inglés
Calendario de la edición:
6 veces al año
Temas de la revista:
Engineering, Introductions and Overviews, other