<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.</p></abstract>

Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.

PATTERNED LASER CRYSTALLIZATION OF a-Si

Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., Riga, LV-1063, LATVIA

Sidrabe Inc., 17 Krustpils Str., Riga, LV-1073, LATVIA

Latvian Journal of Physics and Technical Sciences

{"article-title":"PATTERNED LASER CRYSTALLIZATION OF a-Si"}

Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized...

PATTERNED LASER CRYSTALLIZATION OF a-Si

Publicado en línea: 22 jul 2009

Páginas: 50 - 54

DOI: https://doi.org/10.2478/v10047-009-0009-y

This content is open access.