<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Graphene, a single atom thick sheet is considered a key candidate for the future nanotechnology, due to its unique extraordinary properties. Researchers are trying to synthesize bulk graphene via chemical route from graphene oxide precursor. In the present work, we investigated a safe and efficient way of monolayer graphene oxide synthesis. To get a high degree of oxidation, we sonicated the graphite flakes before oxidation. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) results confirmed graphene oxide formation and high degree of oxidation. Raman spectroscopy and atomic force microscopy (AFM) results revealed a monolayer of graphene oxide (GO) flakes. The sheet like morphology of the GO flakes was further confirmed by scanning electron microscopy (SEM). The Hall effect measurements were performed on the GO film on a silica substrate to investigate its electrical properties. The results obtained, revealed that the GO film is perfectly insulating, having electrical resistivity up to 8.4 × 108 (Ω·cm) at room temperature.</p></abstract>

Graphene, a single atom thick sheet is considered a key candidate for the future nanotechnology, due to its unique extraordinary properties. Researchers are trying to synthesize bulk graphene via chemical route from graphene oxide precursor. In the present work, we investigated a safe and efficient way of monolayer graphene oxide synthesis. To get a high degree of oxidation, we sonicated the graphite flakes before oxidation. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) results confirmed graphene oxide formation and high degree of oxidation. Raman spectroscopy and atomic force microscopy (AFM) results revealed a monolayer of graphene oxide (GO) flakes. The sheet like morphology of the GO flakes was further confirmed by scanning electron microscopy (SEM). The Hall effect measurements were performed on the GO film on a silica substrate to investigate its electrical properties. The results obtained, revealed that the GO film is perfectly insulating, having electrical resistivity up to 8.4 × 108 (Ω·cm) at room temperature.

Synthesis of mono layer graphene oxide from sonicated graphite flakes and their Hall effect measurements

Thermal Transport Laboratory, Department of Material Engineering, School of Chemical and Material Engineering, National University of Sciences and Technology, Sector H-12, Islamabad, 44000, Pakistan

Department of Physics, Air University, E-9 PAF Complex, Islamabad, Pakistan

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Graphene, a single atom thick sheet is considered a key candidate for the future nanotechnology, due to its unique extraordinary properties. Researchers are...

Synthesis of mono layer graphene oxide from sonicated graphite flakes and their Hall effect measurements

Publicado en línea: 22 jul 2014

Páginas: 292 - 296

DOI: https://doi.org/10.2478/s13536-013-0189-2

Palabras clave
GO (grapheme oxide), monolayer, sonication, electrical resistivity

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Synthesis of mono layer graphene oxide from sonicated graphite flakes and their Hall effect measurements

Publicado en línea: 22 jul 2014

Páginas: 292 - 296

DOI: https://doi.org/10.2478/s13536-013-0189-2

Palabras claveGO (grapheme oxide), monolayer, sonication, electrical resistivity

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
GO (grapheme oxide), monolayer, sonication, electrical resistivity