<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>A simple approach to study the effect of processing on the charge carrier mobility in an organic field effect transistor (OFET) based on regioregular poly(3-hexylthiophene) (RR P3HT) is investigated in this paper. It is found that different processing conditions can induce different degrees of hysteresis, which is well correlated with the charge mobility where lower hysteresis represents higher stability and hence higher charge mobility. Solvent annealing tends to create large nano-scale pinholes in P3HT which degrade the mobility.</p></abstract>

A simple approach to study the effect of processing on the charge carrier mobility in an organic field effect transistor (OFET) based on regioregular poly(3-hexylthiophene) (RR P3HT) is investigated in this paper. It is found that different processing conditions can induce different degrees of hysteresis, which is well correlated with the charge mobility where lower hysteresis represents higher stability and hence higher charge mobility. Solvent annealing tends to create large nano-scale pinholes in P3HT which degrade the mobility.

Comparative study on different annealing methods and choice of solvent in organic field effect transistors based on Poly(3-hexylthiophene)

Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603, Kuala Lumpur, Malaysia

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

A simple approach to study the effect of processing on the charge carrier mobility in an organic field effect transistor (OFET) based on regioregular...

Comparative study on different annealing methods and choice of solvent in organic field effect transistors based on Poly(3-hexylthiophene)

Publicado en línea: 29 ago 2013

Páginas: 325 - 330

DOI: https://doi.org/10.2478/s13536-013-0108-6

Palabras clave
organic field effect transistor, regioregular poly(3-hexylthiophene), solvent annealing, thermal annealing

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Comparative study on different annealing methods and choice of solvent in organic field effect transistors based on Poly(3-hexylthiophene)

Publicado en línea: 29 ago 2013

Páginas: 325 - 330

DOI: https://doi.org/10.2478/s13536-013-0108-6

Palabras claveorganic field effect transistor, regioregular poly(3-hexylthiophene), solvent annealing, thermal annealing

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
organic field effect transistor, regioregular poly(3-hexylthiophene), solvent annealing, thermal annealing