<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1×10−4 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.</p></abstract>

Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1×10−4 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.

Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots

Institute of Physical and Theoretical Chemistry, Chemistry Department, Wroclaw University of Technology, Wyspianskiego 27, 50-370, Wroclaw, Poland

Institute of Physics, National Academy of Science of Ukraine, prospekt Nauky 46, 03680, Kyiv, Ukraine

Institute of Macromolecular Chemistry AS CR, Heyrovsky Sq. 2, 162 06, Prague 6, Czech Republic

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the...

Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots

Publicado en línea: 20 abr 2013

Páginas: 288 - 297

DOI: https://doi.org/10.2478/s13536-013-0101-0

Palabras clave
organic field effect transistor, quantum dots, poly(3-hexylthiophene), hybrid material

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots

Publicado en línea: 20 abr 2013

Páginas: 288 - 297

DOI: https://doi.org/10.2478/s13536-013-0101-0

Palabras claveorganic field effect transistor, quantum dots, poly(3-hexylthiophene), hybrid material

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
organic field effect transistor, quantum dots, poly(3-hexylthiophene), hybrid material