<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>The field electron emission from polycrystalline diamond/silicon and nitrogen-doped polycrystalline diamond/silicon structures obtained by HF CVD deposition method has been investigated. Electron emission currents from the samples were measured in a chamber at the pressure equal to 2·10−6 Pa in sphere-to-plane diode configuration with the 5 μm distance between electrodes. As expected, the results confirm the relation between the structure of diamond films and their emission properties. The type of silicon substrate also influences the value of emission currents and the diamond/n-Si heterostructures exhibit better electron emission than diamond/p-Si ones. The nitrogen doping significantly enhances the electron emission from the heterostructures and their emission parameters. The values of the threshold field between 2 V/μm and 3 V/μm were registered, the values of emission current close to 1 mA/cm2 at 5 V/μm for the nitrogen-doped films were obtained. The shape of current-voltage characteristics for nitrogen-doped polycrystalline films may be interpreted in terms of stochastic distribution of diameters of conducting channels which form the emission centers.</p></abstract>

The field electron emission from polycrystalline diamond/silicon and nitrogen-doped polycrystalline diamond/silicon structures obtained by HF CVD deposition method has been investigated. Electron emission currents from the samples were measured in a chamber at the pressure equal to 2·10−6 Pa in sphere-to-plane diode configuration with the 5 μm distance between electrodes. As expected, the results confirm the relation between the structure of diamond films and their emission properties. The type of silicon substrate also influences the value of emission currents and the diamond/n-Si heterostructures exhibit better electron emission than diamond/p-Si ones. The nitrogen doping significantly enhances the electron emission from the heterostructures and their emission parameters. The values of the threshold field between 2 V/μm and 3 V/μm were registered, the values of emission current close to 1 mA/cm2 at 5 V/μm for the nitrogen-doped films were obtained. The shape of current-voltage characteristics for nitrogen-doped polycrystalline films may be interpreted in terms of stochastic distribution of diameters of conducting channels which form the emission centers.

Electron emission from nitrogen-doped polycrystalline diamond/Si heterostructures

Institute of Physics, Technical University of Łódź, Wólczańska 219, 90-924, Łódź, Poland

Institute of Physics, Kazimierz Wielki University, Powstańców Wielkopolskich 2, 85-090, Bydgoszcz, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

The field electron emission from polycrystalline diamond/silicon and nitrogen-doped polycrystalline diamond/silicon structures obtained by HF CVD deposition...

Electron emission from nitrogen-doped polycrystalline diamond/Si heterostructures

Publicado en línea: 14 dic 2012

Páginas: 390 - 397

DOI: https://doi.org/10.2478/s13536-012-0041-0

Palabras clave
HF CVD, diamond films, nitrogen-doping, Raman spectroscopy, electron emission

© 2012 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Electron emission from nitrogen-doped polycrystalline diamond/Si heterostructures

Publicado en línea: 14 dic 2012

Páginas: 390 - 397

DOI: https://doi.org/10.2478/s13536-012-0041-0

Palabras claveHF CVD, diamond films, nitrogen-doping, Raman spectroscopy, electron emission

© 2012 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
HF CVD, diamond films, nitrogen-doping, Raman spectroscopy, electron emission