<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>A general formula providing the transmission coefficient through a given barrier, sandwiched by semiconductor reservoirs under bias is presented in terms of the incoming carrier energy and the logarithmic wave function derivative at the start of the barrier. Furthermore, the formula involves the carrier effective masses in the barrier and reservoir regions. The procedure employed is based on solving an appropriate Riccati equation governing the logarithmic derivative along the barrier width at the end of which it is known in terms of the carrier energy and applied bias. On account of the facility provided for obtaining the transmission coefficient we obtained the I–V characteristic of a quantum dot carved barrier, which exhibits a region of quite a large negative differential resistance together with a high peak to valley ratio. Under the circumstances, the possibility of developing a nanostructure switch utilizing a small variation in the applied bias exists.</p></abstract>

A general formula providing the transmission coefficient through a given barrier, sandwiched by semiconductor reservoirs under bias is presented in terms of the incoming carrier energy and the logarithmic wave function derivative at the start of the barrier. Furthermore, the formula involves the carrier effective masses in the barrier and reservoir regions. The procedure employed is based on solving an appropriate Riccati equation governing the logarithmic derivative along the barrier width at the end of which it is known in terms of the carrier energy and applied bias. On account of the facility provided for obtaining the transmission coefficient we obtained the I–V characteristic of a quantum dot carved barrier, which exhibits a region of quite a large negative differential resistance together with a high peak to valley ratio. Under the circumstances, the possibility of developing a nanostructure switch utilizing a small variation in the applied bias exists.

A general formula for the transmission coefficient through a barrier and application to I–V characteristic

Department of Physics, Solid State Physics Section, University of Athens Panepistimiopolis, Athens, 157 84, Zografos, Athens, Greece

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

A general formula providing the transmission coefficient through a given barrier, sandwiched by semiconductor reservoirs under bias is presented in terms of...

A general formula for the transmission coefficient through a barrier and application to I–V characteristic

Publicado en línea: 08 may 2012

Páginas: 266 - 271

DOI: https://doi.org/10.2478/s13536-011-0042-4

Palabras clave
transmission coefficient, momentum related quantity, I–V characteristic

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

A general formula for the transmission coefficient through a barrier and application to I–V characteristic

Publicado en línea: 08 may 2012

Páginas: 266 - 271

DOI: https://doi.org/10.2478/s13536-011-0042-4

Palabras clavetransmission coefficient, momentum related quantity, I–V characteristic

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
transmission coefficient, momentum related quantity, I–V characteristic