<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1 0 0) single crystal using a vacuum coating unit. Structural investigation of the deposited CuO film was made using X-ray difraction (XRD) and energy dispersive X-ray analysis (EDX) techniques. It was determined from the obtained results that the copper oxide films exhibited single-phase CuO properties in a monoclinic crystal structure. Transmittance measurement of the CuO film was performed by a UV-Vis spectrophotometer. Band gap energy of the film was determined as 1.74 eV under indirect band gap assumption. Current-voltage (I-V) measurements of the CuO/n-Si heterojunctions were performed under illumination and in the dark to reveal the photovoltaic and electrical properties of the produced samples. From the I-V measurements, it was revealed that the CuO/n-Si heterojunctions produced by thermal evaporation exibit excellent rectifying properties in dark and photovoltaic properties under illumination. Conversion efficiencies of the CuO/n-Si solar cells are comparable to those of CuO/n-Si produced by other methods described in the literature.</p></abstract>

Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1 0 0) single crystal using a vacuum coating unit. Structural investigation of the deposited CuO film was made using X-ray difraction (XRD) and energy dispersive X-ray analysis (EDX) techniques. It was determined from the obtained results that the copper oxide films exhibited single-phase CuO properties in a monoclinic crystal structure. Transmittance measurement of the CuO film was performed by a UV-Vis spectrophotometer. Band gap energy of the film was determined as 1.74 eV under indirect band gap assumption. Current-voltage (I-V) measurements of the CuO/n-Si heterojunctions were performed under illumination and in the dark to reveal the photovoltaic and electrical properties of the produced samples. From the I-V measurements, it was revealed that the CuO/n-Si heterojunctions produced by thermal evaporation exibit excellent rectifying properties in dark and photovoltaic properties under illumination. Conversion efficiencies of the CuO/n-Si solar cells are comparable to those of CuO/n-Si produced by other methods described in the literature.

Characterization of CuO/n-Si heterojunction solar cells produced by thermal evaporation

Department of Physics, Institute of Science and Technology

Department of Physics, Faculty of Science

Department of Physics, Faculty of Sciences and Arts

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1 0 0) single crystal using a vacuum coating unit. Structural...

Characterization of CuO/n-Si heterojunction solar cells produced by thermal evaporation

Publicado en línea: 01 feb 2019

Páginas: 668 - 674

Recibido: 16 nov 2017

Aceptado: 11 oct 2018

DOI: https://doi.org/10.2478/msp-2018-0092

Palabras clave
copper oxide, heterojunction, photovoltaics, solar cell, rectifier

© 2018 Reşit Özmenteş et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Characterization of CuO/n-Si heterojunction solar cells produced by thermal evaporation

Publicado en línea: 01 feb 2019

Páginas: 668 - 674

Recibido: 16 nov 2017

Aceptado: 11 oct 2018

DOI: https://doi.org/10.2478/msp-2018-0092

Palabras clavecopper oxide, heterojunction, photovoltaics, solar cell, rectifier

© 2018 Reşit Özmenteş et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Palabras clave
copper oxide, heterojunction, photovoltaics, solar cell, rectifier