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Publicado en línea: 16 jul 2014
Páginas: 51 - 57
DOI: https://doi.org/10.2478/lpts-2014-0019
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© by G. Chikvaidze
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure